发明授权
US06623711B2 Siloxane-based resin and method for forming insulating film between interconnect layers in semiconductor devices by using the same
失效
基于硅氧烷的树脂以及通过使用它们在半导体器件中的互连层之间形成绝缘膜的方法
- 专利标题： Siloxane-based resin and method for forming insulating film between interconnect layers in semiconductor devices by using the same
- 专利标题（中）： 基于硅氧烷的树脂以及通过使用它们在半导体器件中的互连层之间形成绝缘膜的方法
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申请号： US10105723申请日： 2002-03-27
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公开(公告)号： US06623711B2公开(公告)日： 2003-09-23
- 发明人: Yi Yeol Lyu , Jin Heong Yim , Sang Kook Mah , Eun Ju Nah , Il Sun Hwang , Hyun Dam Jeong , Jung Hyung Kim
- 申请人： Yi Yeol Lyu , Jin Heong Yim , Sang Kook Mah , Eun Ju Nah , Il Sun Hwang , Hyun Dam Jeong , Jung Hyung Kim
- 优先权： KR2001-0015884 20010327; KR2001-0056798 20010914
- 主分类号： C22B6002
- IPC分类号： C22B6002
摘要：
Disclosed herein are siloxane-based resins prepared by hydrolyzing and polycondensing cyclic and/or cage-shape siloxane compounds, optionally with at least one silane compound, in an organic solvent in the presence of a catalyst and water. Also, disclosed herein are methods for forming insulating film between interconnect layers in semiconductor devices by using the siloxane-based resins thus prepared as low dielectric insulating materials.
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