公开(公告)号：US07019099B2

公开(公告)日：2006-03-28

申请号：US10621380

申请日：2003-07-18

申请人： Yi Yeol Lyu ,  Jin Heong Yim ,  Sang Kook Mah ,  Eun Ju Nah ,  Il Sun Hwang ,  Hyun Dam Jeong ,  Jung Hyung Kim

发明人： Yi Yeol Lyu ,  Jin Heong Yim ,  Sang Kook Mah ,  Eun Ju Nah ,  Il Sun Hwang ,  Hyun Dam Jeong ,  Jung Hyung Kim

IPC分类号： C08G77/18

CPC分类号： H01L21/02126 ,  C08G77/04 ,  C08G77/50 ,  H01B3/46 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/3124 ,  H01L21/31695

摘要： Disclosed herein are siloxane-based resins prepared by hydrolyzing and polycondensing cyclic and/or cage-shape siloxane compounds, optionally with at least one silane compound, in an organic solvent in the presence of a catalyst and water. Also, disclosed herein are methods for forming insulating film between interconnect layers in semiconductor devices by using the siloxane-based resins thus prepared as low dielectric insulating materials.

公开(公告)号：US06623711B2

公开(公告)日：2003-09-23

申请号：US10105723

申请日：2002-03-27

申请人： Yi Yeol Lyu ,  Jin Heong Yim ,  Sang Kook Mah ,  Eun Ju Nah ,  Il Sun Hwang ,  Hyun Dam Jeong ,  Jung Hyung Kim

发明人： Yi Yeol Lyu ,  Jin Heong Yim ,  Sang Kook Mah ,  Eun Ju Nah ,  Il Sun Hwang ,  Hyun Dam Jeong ,  Jung Hyung Kim

IPC分类号： C22B6002

CPC分类号： H01L21/02126 ,  C08G77/04 ,  C08G77/50 ,  H01B3/46 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/3124 ,  H01L21/31695

摘要： Disclosed herein are siloxane-based resins prepared by hydrolyzing and polycondensing cyclic and/or cage-shape siloxane compounds, optionally with at least one silane compound, in an organic solvent in the presence of a catalyst and water. Also, disclosed herein are methods for forming insulating film between interconnect layers in semiconductor devices by using the siloxane-based resins thus prepared as low dielectric insulating materials.

摘要翻译： 本文公开了通过在有机溶剂中在催化剂和水的存在下水解和缩聚环状和/或笼形硅氧烷化合物，任选地与至少一种硅烷化合物制备的硅氧烷基树脂。 此外，本文公开了通过使用如此制备的作为低介电绝缘材料的硅氧烷类树脂在半导体器件中的互连层之间形成绝缘膜的方法。

公开(公告)号：US06660822B2

公开(公告)日：2003-12-09

申请号：US09895158

申请日：2001-07-02

申请人： Yi Yeol Lyu ,  Jin Heong Yim ,  Sang Kook Mah ,  Eun Ju Nah ,  Il Sun Hwang ,  Hyun Dam Jeong ,  Jin Gyu Lee

发明人： Yi Yeol Lyu ,  Jin Heong Yim ,  Sang Kook Mah ,  Eun Ju Nah ,  Il Sun Hwang ,  Hyun Dam Jeong ,  Jin Gyu Lee

IPC分类号： C08G7718

CPC分类号： H01L21/02126 ,  C08G77/50 ,  C09D183/14 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/3122

摘要： The present invention provides a method for forming insulating film between interconnect layers in microelectronic devices, said method comprising the steps of: preparing siloxane-based resins by hydrolyzing and polycondensing the compound represented by the following formula (1), with or without the compound represented by the following formula (2), in an organic solvent in the presence of a catalyst and water; coating a silicon substrate with the siloxane-based resins dissolved in an organic solvent; and heat-curing the resulting coating film:  RSiX1X2X3  [2] in which, R is hydrogen atom, C1˜C3 alkyl group, C3˜C10 cycloalkyl group, or C6˜C15 aryl group; X1, X2 and X3 are independently C1˜C3 alkyl group, C1˜C10 alkoxy group, or halogen atom; n is an integer ranging from 3 to 8; and m is an integer ranging from 1 to 10.

摘要翻译： 本发明提供了一种在微电子器件中在互连层之间形成绝缘膜的方法，所述方法包括以下步骤：通过将下式（1）表示的化合物水解和缩聚来制备硅氧烷基树脂，所述化合物或不含有化合物 通过下式（2）在有机溶剂中在催化剂和水的存在下反应; 用溶解在有机溶剂中的硅氧烷基树脂涂覆硅衬底; 对所得涂膜进行热固化，其中R为氢原子，C1〜C3烷基，C3〜C10环烷基或C6〜C15芳基; X1，X2和X3独立为C1〜C3烷基，C1 〜C10烷氧基或卤原子; n为3〜8的整数， andm为1〜10的整数。

公开(公告)号：US06632748B2

公开(公告)日：2003-10-14

申请号：US09961449

申请日：2001-09-25

申请人： Jin Heong Yim ,  Yi Yeol Lyu ,  Sang Kook Mah ,  Eun Ju Nah ,  Il Sun Hwang ,  Keun Byoung Yoon

发明人： Jin Heong Yim ,  Yi Yeol Lyu ,  Sang Kook Mah ,  Eun Ju Nah ,  Il Sun Hwang ,  Keun Byoung Yoon

IPC分类号： H01L2131

CPC分类号： H01L21/31695 ,  C08L5/16 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/3124 ,  C08L2666/02

摘要： The present invention provides a composition for preparing substances having nano-pores, said composition comprising cyclodextrin derivative, thermo-stable organic or inorganic matrix precursor, and solvent for dissolving said two solid components. There is also provided an interlayer insulating film having evenly distributed nano-pores with a diameter less than 50 Å, which is required for semiconductor devices.

摘要翻译： 本发明提供一种用于制备具有纳米孔的物质的组合物，所述组合物包含环糊精衍生物，热稳定性有机或无机基质前体，以及用于溶解所述两种固体组分的溶剂。 还提供了具有均匀分布的纳米孔的层间绝缘膜，其直径小于等于半导体器件所需的纳米孔。

公开(公告)号：US07108922B2

公开(公告)日：2006-09-19

申请号：US10768058

申请日：2004-02-02

申请人： Yi Yeol Lyu ,  Jin Heong Yim ,  Ki Yong Song ,  Hyun Dam Jeong ,  Joon Sung Ryu

发明人： Yi Yeol Lyu ,  Jin Heong Yim ,  Ki Yong Song ,  Hyun Dam Jeong ,  Joon Sung Ryu

IPC分类号： C09D5/00

CPC分类号： C09D183/14 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/3122 ,  H01L21/31695 ,  Y10T428/31663

摘要： A siloxane-based resin having a novel structure and a semiconductor interlayer insulating film using the same. The siloxane-based resins have a low dielectric constant in addition to excellent mechanical properties and are useful materials in an insulating film between interconnecting layers of a semiconductor device.

摘要翻译： 具有新颖结构的硅氧烷类树脂和使用其的半导体层间绝缘膜。 除了优异的机械性能之外，硅氧烷类树脂具有低介电常数，并且是在半导体器件的互连层之间的绝缘膜中的有用材料。

公开(公告)号：US07144453B2

公开(公告)日：2006-12-05

申请号：US10694942

申请日：2003-10-29

申请人： Jin Heong Yim ,  Yi Yeol Lyu ,  Jung Bae Kim ,  Kwang Hee Lee

发明人： Jin Heong Yim ,  Yi Yeol Lyu ,  Jung Bae Kim ,  Kwang Hee Lee

IPC分类号： C09D183/05 ,  C09D183/06

CPC分类号： H01B3/185 ,  H01B3/18 ,  Y10T428/249953

摘要： A composition for preparing a porous interlayer dielectric thin film which includes a saccharide or saccharide derivative, a thermo-stable organic or inorganic matrix precursor, and a solvent for dissolving the two solid components. Also provided is a dielectric thin film having evenly distributed nano-pores with a diameter of less than 50 Å, which is required for semiconductor devices.

摘要翻译： 一种用于制备包含糖或糖衍生物的多孔层间电介质薄膜的组合物，热稳定性有机或无机基质前体以及用于溶解两种固体组分的溶剂。 还提供了具有半导体器件所需的直径小于等于的均匀分布的纳米孔的电介质薄膜。

公开(公告)号：US07014917B2

公开(公告)日：2006-03-21

申请号：US10695777

申请日：2003-10-30

申请人： Yi Yeol Lyu ,  Jin Heong Yim ,  Joon Sung Ryu ,  Ki Yong Song

发明人： Yi Yeol Lyu ,  Jin Heong Yim ,  Joon Sung Ryu ,  Ki Yong Song

IPC分类号： B32B9/04

CPC分类号： H01L21/02126 ,  C08G77/50 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/3122 ,  Y10T428/31663

摘要： Disclosed herein are a siloxane-based resin having novel structure and an interlayer insulating film for a semiconductor device formed using the same The siloxane-based resins have so low dielectric constant in addition to excellent mechanical properties, heat-stability and crack-resistance that they are useful materials for an insulating film between interconnect layers of a semiconductor device.

摘要翻译： 本文公开了具有新颖结构的硅氧烷基树脂和使用其形成的半导体器件的层间绝缘膜除了优异的机械性能，热稳定性和抗裂性之外，硅氧烷基树脂具有如此低的介电常数 是用于半导体器件的互连层之间的绝缘膜的有用材料。

公开(公告)号：US07169477B2

公开(公告)日：2007-01-30

申请号：US10724732

申请日：2003-12-02

申请人： Yi Yeol Lyu ,  Kwang Hee Lee ,  Ji Man Kim ,  Seok Chang ,  Jin Heong Yim ,  Jae Geun Park

发明人： Yi Yeol Lyu ,  Kwang Hee Lee ,  Ji Man Kim ,  Seok Chang ,  Jin Heong Yim ,  Jae Geun Park

IPC分类号： B32B9/04 ,  D05D3/02

CPC分类号： H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/3124 ,  H01L21/31695 ,  Y10S428/924 ,  Y10S428/931 ,  Y10T428/31663

摘要： The present invention provides a composition for preparing porous dielectric thin films containing pore-generating material, said composition comprising gemini detergent, and/or a quaternary alkyl ammonium salt, a thermo-stable organic or inorganic matrix precursor, and solvent for dissolving the two solid components. There is also provided an interlayer insulating film having good mechanical properties such as hardness, modulus and hydroscopicity, which is required for semiconductor devices.

摘要翻译： 本发明提供了一种用于制备含有孔产生材料的多孔电介质薄膜的组合物，所述组合物包含双子晶洗涤剂和/或季烷基铵盐，热稳定有机或无机基质前体，以及用于溶解两种固体的溶剂 组件。 还提供了半导体器件所需的具有良好机械性能如硬度，模量和吸湿性的层间绝缘膜。

公开(公告)号：US08039643B2

公开(公告)日：2011-10-18

申请号：US12805431

申请日：2010-07-30

申请人： Kwang Hee Lee ,  Yi Yeol Lyu ,  Sang Kyun Lee

发明人： Kwang Hee Lee ,  Yi Yeol Lyu ,  Sang Kyun Lee

IPC分类号： C07F15/00 ,  H01L51/00

CPC分类号： H01L51/0085 ,  B82Y10/00 ,  G11C13/0014 ,  G11C13/0016 ,  G11C2213/51 ,  G11C2213/77 ,  H01L51/0591

摘要： Disclosed are a composition comprising a mixture of at least one iridium organometallic compound and an electrically conductive polymer, an organic active layer comprising the same, an organic memory device comprising the organic active layer and methods for fabricating the same. The organic memory device may include a first electrode, a second electrode and the organic active layer between the first and second electrodes. The organic memory device possesses the advantages of rapid switching time, decreased operating voltage, decreased fabrication costs, increased reliability and improved non-volatility.

公开(公告)号：US07071540B2

公开(公告)日：2006-07-04

申请号：US10722460

申请日：2003-11-28

申请人： Yi Yeol Lyu ,  Ki Yong Song ,  Joon Sung Ryu ,  Jong Baek Seon

发明人： Yi Yeol Lyu ,  Ki Yong Song ,  Joon Sung Ryu ,  Jong Baek Seon

IPC分类号： H01L31/00

CPC分类号： H01B3/46 ,  C08G77/50 ,  C09D183/14 ,  Y10T428/2962 ,  Y10T428/2995 ,  Y10T428/31663

摘要： A siloxane-based resin having a novel structure and a semiconductor interlayer insulating film using the same. The siloxane-based resins have a low dielectric constant in addition to excellent mechanical properties and are useful materials in an insulating film between interconnect layers of a semiconductor device.