Method for forming insulating film between interconnect layers in microelectronic devices
    3.
    发明授权
    Method for forming insulating film between interconnect layers in microelectronic devices 有权
    在微电子器件中在互连层之间形成绝缘膜的方法

    公开(公告)号:US06660822B2

    公开(公告)日:2003-12-09

    申请号:US09895158

    申请日:2001-07-02

    IPC分类号: C08G7718

    摘要: The present invention provides a method for forming insulating film between interconnect layers in microelectronic devices, said method comprising the steps of: preparing siloxane-based resins by hydrolyzing and polycondensing the compound represented by the following formula (1), with or without the compound represented by the following formula (2), in an organic solvent in the presence of a catalyst and water; coating a silicon substrate with the siloxane-based resins dissolved in an organic solvent; and heat-curing the resulting coating film:  RSiX1X2X3  [2] in which, R is hydrogen atom, C1˜C3 alkyl group, C3˜C10 cycloalkyl group, or C6˜C15 aryl group; X1, X2 and X3 are independently C1˜C3 alkyl group, C1˜C10 alkoxy group, or halogen atom; n is an integer ranging from 3 to 8; and m is an integer ranging from 1 to 10.

    摘要翻译: 本发明提供了一种在微电子器件中在互连层之间形成绝缘膜的方法,所述方法包括以下步骤:通过将下式(1)表示的化合物水解和缩聚来制备硅氧烷基树脂,所述化合物或不含有化合物 通过下式(2)在有机溶剂中在催化剂和水的存在下反应; 用溶解在有机溶剂中的硅氧烷基树脂涂覆硅衬底; 对所得涂膜进行热固化,其中R为氢原子,C1〜C3烷基,C3〜C10环烷基或C6〜C15芳基; X1,X2和X3独立为C1〜C3烷基,C1 〜C10烷氧基或卤原子; n为3〜8的整数, andm为1〜10的整数。