发明授权
- 专利标题: Semiconductor device
- 专利标题(中): 半导体器件
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申请号: US09953960申请日: 2001-09-18
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公开(公告)号: US06633070B2公开(公告)日: 2003-10-14
- 发明人: Naruhisa Miura , Toshiyuki Oishi , Yuji Abe , Kohei Sugihara
- 申请人: Naruhisa Miura , Toshiyuki Oishi , Yuji Abe , Kohei Sugihara
- 优先权: JP2001-133841 20010501
- 主分类号: H01L2976
- IPC分类号: H01L2976
摘要:
A field-effect transistor including a gate electrode, silicon layers, and source and drain regions at a surface of a silicon substrate. Sidewall insulating films on the opposite side surfaces of the gate electrode are located between the gate electrode and the silicon layers and contain respective voids.
公开/授权文献
- US20020163036A1 Semiconductor Device 公开/授权日:2002-11-07