- 专利标题： Semiconductor memory device having improved data transfer rate without providing a register for holding write data
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申请号： US10057976申请日： 2002-01-29
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公开(公告)号： US06636444B2公开(公告)日： 2003-10-21
- 发明人: Toshiya Uchida , Yasurou Matsuzaki
- 申请人： Toshiya Uchida , Yasurou Matsuzaki
- 优先权： JP11-331524 19991122
- 主分类号： G11C1604
- IPC分类号： G11C1604
摘要：
A semiconductor memory device has a read data line, a write data line, a data holding circuit, and a data writing circuit. The data holding circuit holds data on the write data line, and the data writing circuit writes the data held on the write data line into a memory cell. Further, a semiconductor memory device has a read data line, a write data line, and an address information holding circuit. The address information holding circuit holds address information that is input in relation to write data, and when an access occurs to the address held in the address information holding circuit, data held on the write data line is written into a memory cell corresponding to the address.
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