发明授权
- 专利标题： Film forming method and semiconductor device
- 专利标题（中）： 成膜方法和半导体器件
-
申请号： US09742242申请日： 2000-12-22
-
公开(公告)号： US06642157B2公开(公告)日： 2003-11-04
- 发明人: Yoshimi Shioya , Yuichiro Kotake , Youichi Yamamoto , Tomomi Suzuki , Hiroshi Ikakura , Shoji Ohgawara , Kouichi Ohira , Kazuo Maeda
- 申请人： Yoshimi Shioya , Yuichiro Kotake , Youichi Yamamoto , Tomomi Suzuki , Hiroshi Ikakura , Shoji Ohgawara , Kouichi Ohira , Kazuo Maeda
- 优先权： JP11-375611 19991228; JP2000-188307 20000622; JP2000-263991 20000831
- 主分类号： H01L2131
- IPC分类号： H01L2131
摘要：
There is provided the film forming method of forming the insulating film 204 containing silicon on the substrate 103 by plasmanizing the compound having the siloxane bonds and the oxidizing gas to react with each other.
公开/授权文献
- US20010034140A1 Film forming method and semiconductor device 公开/授权日：2001-10-25
信息查询
