公开(公告)号：US06645883B2

公开(公告)日：2003-11-11

申请号：US09863382

申请日：2001-05-24

申请人： Youichi Yamamoto ,  Hiroshi Ikakura ,  Tomomi Suzuki ,  Yuichiro Kotake ,  Yoshimi Shioya ,  Kouichi Ohira ,  Shoji Ohgawara ,  Kazuo Maeda

发明人： Youichi Yamamoto ,  Hiroshi Ikakura ,  Tomomi Suzuki ,  Yuichiro Kotake ,  Yoshimi Shioya ,  Kouichi Ohira ,  Shoji Ohgawara ,  Kazuo Maeda

IPC分类号： H01L2131

CPC分类号： H01L21/02126 ,  C23C16/401 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3122 ,  H01L21/31612

摘要： The present invention discloses a film forming method for forming an insulating film having a low dielectric constant. This method comprises the steps of adding at least one diluting gas of an inert gas and a nitrogen gas (N2) to a major deposition gas component consisting of siloxane and N2O, converting the resultant deposition gas into plasma, causing reaction in the plasma, and forming an insulating film 25,27, or 28 on a substrate targeted for film formation.

摘要翻译： 本发明公开了一种形成具有低介电常数的绝缘膜的成膜方法。 该方法包括以下步骤：将惰性气体和氮气（N 2）的至少一种稀释气体添加到由硅氧烷和N 2 O组成的主要沉积气体组分中，将所得沉积气体转化成等离子体，引起等离子体中的反应，以及 在用于成膜的基板上形成绝缘膜25,27或28。

公开(公告)号：US06479409B2

公开(公告)日：2002-11-12

申请号：US09790568

申请日：2001-02-23

申请人： Yoshimi Shioya ,  Kouichi Ohira ,  Kazuo Maeda ,  Tomomi Suzuki ,  Hiroshi Ikakura ,  Youichi Yamamoto ,  Yuichiro Kotake ,  Shoji Ohgawara ,  Makoto Kurotobi

发明人： Yoshimi Shioya ,  Kouichi Ohira ,  Kazuo Maeda ,  Tomomi Suzuki ,  Hiroshi Ikakura ,  Youichi Yamamoto ,  Yuichiro Kotake ,  Shoji Ohgawara ,  Makoto Kurotobi

IPC分类号： H01L2131

CPC分类号： H01L21/02115 ,  C23C16/30 ,  C23C16/5096 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/31116 ,  H01L21/31633 ,  H01L21/76802 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76837 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： Disclosed is a method of fabricating a semiconductor device, in which an interlayer insulating film having a low dielectric constant is formed by coating a wiring, and either a via hole or a contact hole is formed in the interlayer insulating film. The method of fabricating a semiconductor device having the interlayer insulating film 25 formed on the film-formed substrate 21 with the exposed wiring 23, comprises the step of converting a silicon compound containing only the Si, O, C and H into a plasma gas as a film-forming gas to react the plasma gas, thus forming the block insulating film 24 containing silicon (Si), oxygen (O), carbon (C) and hydrogen (H) between the wiring 23 and the interlayer insulating film 25.

摘要翻译： 公开了一种制造半导体器件的方法，其中通过涂覆布线形成具有低介电常数的层间绝缘膜，并且在层间绝缘膜中形成通孔或接触孔。 制造具有形成在膜形成基板21上的层间绝缘膜25与暴露布线23的半导体器件的方法包括将仅含有Si，O，C和H的硅化合物转化成等离子体气体的步骤， 使等离子体气体反应的成膜气体，从而在布线23和层间绝缘膜25之间形成含有硅（Si），氧（O），碳（C）和氢（H）的嵌段绝缘膜24。

公开(公告)号：US06911405B2

公开(公告)日：2005-06-28

申请号：US09988685

申请日：2001-11-20

申请人： Yoshimi Shioya ,  Kouichi Ohira ,  Kazuo Maeda ,  Tomomi Suzuki ,  Youichi Yamamoto ,  Yuichiro Kotake ,  Hiroshi Ikakura ,  Shoji Ohgawara

发明人： Yoshimi Shioya ,  Kouichi Ohira ,  Kazuo Maeda ,  Tomomi Suzuki ,  Youichi Yamamoto ,  Yuichiro Kotake ,  Hiroshi Ikakura ,  Shoji Ohgawara

IPC分类号： H01L21/28 ,  H01L21/205 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/314 ,  H01L21/316 ,  H01L21/318 ,  H01L21/3205 ,  H01L21/321 ,  H01L21/3213 ,  H01L21/768 ,  H01L23/52 ,  H01L23/522 ,  H01L21/76 ,  H01L21/26 ,  H01L21/44

CPC分类号： H01L21/7685 ,  H01L21/3105 ,  H01L21/31116 ,  H01L21/3144 ,  H01L21/3185 ,  H01L21/321 ,  H01L21/32136 ,  H01L21/76826 ,  H01L21/76834 ,  H01L21/76838 ,  H01L21/76867 ,  H01L21/76886

摘要： A process gas consisting of one of N2, N2O or a mixture thereof is converted to a plasma and then a surface of a copper wiring layer is exposed to the plasma of the process gas, whereby a surface portion of the copper wiring layer is reformed and made into a copper diffusion preventing barrier. According to this method, a noble semiconductor device can be provided having increased operational speed and less copper diffusion.

摘要翻译： 由N 2 N 2 N 2 O 2或其混合物之一组成的工艺气体被转化为等离子体，然后将铜布线层的表面暴露于等离子体 的处理气体，由此将铜布线层的表面部分重整并制成铜扩散防止屏障。 根据该方法，可以提供具有增加的操作速度和较少的铜扩散的贵金属半导体器件。

公开(公告)号：US06642157B2

公开(公告)日：2003-11-04

申请号：US09742242

申请日：2000-12-22

申请人： Yoshimi Shioya ,  Yuichiro Kotake ,  Youichi Yamamoto ,  Tomomi Suzuki ,  Hiroshi Ikakura ,  Shoji Ohgawara ,  Kouichi Ohira ,  Kazuo Maeda

发明人： Yoshimi Shioya ,  Yuichiro Kotake ,  Youichi Yamamoto ,  Tomomi Suzuki ,  Hiroshi Ikakura ,  Shoji Ohgawara ,  Kouichi Ohira ,  Kazuo Maeda

IPC分类号： H01L2131

CPC分类号： H01L21/02274 ,  C23C16/308 ,  C23C16/402 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/31116 ,  H01L21/3122 ,  H01L21/3145 ,  H01L21/31612 ,  H01L21/31695 ,  H01L21/76802

摘要： There is provided the film forming method of forming the insulating film 204 containing silicon on the substrate 103 by plasmanizing the compound having the siloxane bonds and the oxidizing gas to react with each other.

摘要翻译： 提供了通过使具有硅氧烷键的化合物和氧化气体通过等离子体反应而在衬底103上形成含有硅的绝缘膜204的成膜方法。

公开(公告)号：US06630412B2

公开(公告)日：2003-10-07

申请号：US09897069

申请日：2001-07-03

申请人： Yoshimi Shioya ,  Kouichi Ohira ,  Kazuo Maeda ,  Tomomi Suzuki ,  Hiroshi Ikakura ,  Youichi Yamamoto

发明人： Yoshimi Shioya ,  Kouichi Ohira ,  Kazuo Maeda ,  Tomomi Suzuki ,  Hiroshi Ikakura ,  Youichi Yamamoto

IPC分类号： H01L2131

CPC分类号： H01L21/02126 ,  C23C16/308 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3122 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76834

摘要： In a semiconductor device manufacturing method for forming an interlayer insulating film having a low dielectric constant on a substrate 21 from a surface of which a copper wiring 23 is exposed, the interlayer insulating film consists of multi-layered insulating films 24, 25, 29 and the insulating film 24, that contacts to the copper wiring 23, out of the multi-layered insulating films 24, 25, 29 is formed by plasmanizing a film forming gas containing at least an alkyl compound having siloxane bonds and any one of nitrogen (N2) and ammonia (NH3) to react.

公开(公告)号：US06500752B2

公开(公告)日：2002-12-31

申请号：US09904869

申请日：2001-07-16

申请人： Taizo Oku ,  Junichi Aoki ,  Youichi Yamamoto ,  Takashi Koromokawa ,  Kazuo Maeda

发明人： Taizo Oku ,  Junichi Aoki ,  Youichi Yamamoto ,  Takashi Koromokawa ,  Kazuo Maeda

IPC分类号： H01L214763

CPC分类号： H01L21/02274 ,  C23C16/401 ,  C23C16/509 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/3121 ,  H01L21/3122 ,  H01L21/31612 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76834

摘要： The present invention relates to a semiconductor device manufacturing method of forming an inter-wiring layer insulating film having a low dielectric constant to cover a copper wiring. In construction, in a semiconductor device manufacturing method of forming an insulating film 34 having a low dielectric constant on a substrate 20, the insulating film 34 is formed by plasmanizing a film forming gas, that consists of at least any one of alkyl compound having siloxane bonds and methylsilane (SiHn(CH3)4−n: n=0, 1, 2, 3), any one oxygen-containing gas selected from a group consisting of N2O, H2O, and CO2, and ammonia (NH3) to react.

公开(公告)号：US06420276B2

公开(公告)日：2002-07-16

申请号：US09904868

申请日：2001-07-16

申请人： Taizo Oku ,  Junichi Aoki ,  Youichi Yamamoto ,  Takashi Koromokawa ,  Kazuo Maeda

发明人： Taizo Oku ,  Junichi Aoki ,  Youichi Yamamoto ,  Takashi Koromokawa ,  Kazuo Maeda

IPC分类号： H01L2131

CPC分类号： H01L21/02164 ,  C23C16/401 ,  C23C16/509 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02214 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/3122 ,  H01L21/31612 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76834

摘要： The present invention relates to a semiconductor device manufacturing method for forming an interlayer insulating film containing a coating insulating film having a low dielectric constant. In construction, there are provided the steps of preparing a substrate 20 on a surface of which a coating insulating film 26 is formed by coating a coating liquid containing any one selected from a group consisting of silicon-containing inorganic compound and silicon-containing organic compound, and forming a protection layer 27 for covering the coating insulating film 26 by plasmanizing a first film forming gas to react, wherein the first film forming gas consists of any one selected from a group consisting of alkoxy compound having Si—H bonds and siloxane having Si—H bonds and any one oxygen-containing gas selected from a group consisting of O2, N2O, NO2, CO, CO2, and H2O.

摘要翻译： 本发明涉及一种形成含有低介电常数的涂层绝缘膜的层间绝缘膜的半导体器件制造方法。 在构造中，提供了在其表面上制备基材20的步骤，该基材20通过涂布包含选自含硅无机化合物和含硅有机化合物中的任何一种的涂布液而形成涂覆绝缘膜26 并且形成用于通过使第一成膜气体等离子体反应来覆盖涂层绝缘膜26的保护层27，其中第一成膜气体由选自由具有Si-H键的烷氧基化合物和硅氧烷组成的组中的任何一种组成， Si-H键和选自O 2，N 2 O，NO 2，CO，CO 2和H 2 O的任何一种含氧气体。

公开(公告)号：US06835669B2

公开(公告)日：2004-12-28

申请号：US09903764

申请日：2001-07-13

申请人： Taizo Oku ,  Junichi Aoki ,  Youichi Yamamoto ,  Takashi Koromokawa ,  Kazuo Maeda

发明人： Taizo Oku ,  Junichi Aoki ,  Youichi Yamamoto ,  Takashi Koromokawa ,  Kazuo Maeda

IPC分类号： H01L2131

CPC分类号： H01L21/02164 ,  C23C16/401 ,  C23C16/509 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3121 ,  H01L21/3122 ,  H01L21/31612 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76834

摘要： The present invention relates to a film forming method of forming an interlayer insulating film having a low dielectric constant for covering wiring. The insulating film covering wiring is formed on a substrate by converting into a plasma and reacting a film forming gas including a component selected from the group consisting of alkoxy compounds having Si—H bonds and siloxanes having Si—H bonds and an oxygen-containing gas selected from a group consisting of O2, N2O, NO2, CO, CO2, and H2O.

摘要翻译： 本发明涉及形成覆盖布线的介电常数低的层间绝缘膜的成膜方法。 绝缘膜覆盖布线通过转换成等离子体而形成在基板上，并使包含选自由Si-H键的烷氧基化合物和具有Si-H键的硅氧烷和含氧气体组成的组的成膜气体 选自O 2，N 2 O，NO 2，CO，CO 2和H 2 O组成的组。

公开(公告)号：US20110009550A1

公开(公告)日：2011-01-13

申请号：US12885616

申请日：2010-09-20

申请人： Akihiro Uehata ,  Yuji Ogino ,  Mariko Mine ,  Youichi Yamamoto ,  Masao Kawamoto

发明人： Akihiro Uehata ,  Yuji Ogino ,  Mariko Mine ,  Youichi Yamamoto ,  Masao Kawamoto

IPC分类号： C08L83/04 ,  C08G77/04 ,  C08K5/36

CPC分类号： D01F11/04 ,  C08G77/26 ,  D06M15/643 ,  D06M15/6433 ,  D06M15/6436 ,  D07B1/025 ,  D07B2201/2012 ,  D07B2201/2044 ,  D07B2201/2082 ,  D07B2205/2042 ,  D07B2205/3017 ,  Y10T428/31663 ,  Y10T428/31786 ,  D07B2801/10 ,  D07B2801/18 ,  D07B2801/16

摘要： Provided are an organopolysiloxane composition for producing a rope structure excellent in fatigue resistance, a rope structure using the same, and a process for producing the rope structure. The organopolysiloxane composition comprises an organopolysiloxane having an average polymerization degree of 50,000 to 200,000 and represented by the following formula (I): wherein X1, X2, X3 and X4 are the same or different, each independently representing —H, —OH, —COOH, —R, —NH2, —ROH, —RCOOH, or —RNH2; R representing an alkyl group or an aryl group; and each of m and n independently denotes an integer of not less than 1. The organopolysiloxane composition is applied to liquid crystalline polymer filaments in the process of producing the rope structure from the filaments.

摘要翻译： 提供一种用于制造耐疲劳性优良的绳索结构的有机聚硅氧烷组合物，使用该绳索结构的绳索结构以及绳索结构的制造方法。 有机聚硅氧烷组合物包含平均聚合度为50,000〜200,000，由下式（I）表示的有机聚硅氧烷：其中X1，X2，X3和X4相同或不同，各自独立地表示-H，-OH，-COOH ，-R，-NH 2，-ROH，-RCOOH或-RNH 2; R代表烷基或芳基; m和n各自独立地表示不小于1的整数。在从长丝制造绳索结构的过程中，将有机聚硅氧烷组合物施加到液晶聚合物长丝上。

公开(公告)号：US07382968B2

公开(公告)日：2008-06-03

申请号：US10360920

申请日：2003-02-10

申请人： Tohru Suetomo ,  Masahiro Kawasaki ,  Youichi Yamamoto

发明人： Tohru Suetomo ,  Masahiro Kawasaki ,  Youichi Yamamoto

IPC分类号： H04N5/91 ,  H04N7/00

CPC分类号： H04N21/4147 ,  H04N5/76 ,  H04N5/782 ,  H04N21/4334 ,  H04N21/44209

摘要： MPEG encoder 3 generates VOBUs from broadcast waves and writes them to HDD 5. Record controlling unit 10 controls MPEG encoder 3 and HDD 5 to repeatedly perform this writing process for achieving a continuous recording function. Record controlling unit 10 also judges if there are points of time at which, by a broadcast station, (i) a service period is switched to an out-of-service period, and (ii) an out-of-service period is switched to a service period. Record controlling unit 10 suspends the writing to the HDD 5 at a point of time at which a service period is switched to an out-of service period, and resumes the writing to the HDD 5 at a point of time at which an out-of-service period is switched to a service period.

摘要翻译： MPEG编码器3从广播波生成VOBU并将其写入HDD 5。 记录控制单元10控制MPEG编码器3和HDD 5重复执行该写入处理以实现连续记录功能。 记录控制单元10还判断是否存在通过广播站将（i）服务期间切换到停止服务周期的时间点，以及（ii）切换到停止服务周期的时间点 到服务期。 记录控制单元10在服务期间切换到停止服务期的时间点暂停对HDD 5的写入，并且在外部的时间点恢复对HDD 5的写入 服务期间切换到服务期。