发明授权
- 专利标题： Electron-beam processed films for microelectronics structures
- 专利标题（中）： 用于微电子结构的电子束处理膜
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申请号： US08652893申请日： 1996-05-23
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公开(公告)号： US06652922B1公开(公告)日： 2003-11-25
- 发明人: Lynn Forester , Neil H. Hendricks , Dong-Kyu Choi
- 申请人： Lynn Forester , Neil H. Hendricks , Dong-Kyu Choi
- 主分类号： B05D306
- IPC分类号： B05D306
摘要：
An improved method for producing substrates coated with dielectric films for use in microelectronic applications wherein the films are processed by exposing the coated substrate surfaces to a flux of electron beam. Substrates cured via electron beam exposure possess superior dielectric properties, density, uniformity, thermal stability, and oxygen stability.
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