Radiation sensitive silicon-containing negative resists and use thereof

发明授权

US06653045B2 Radiation sensitive silicon-containing negative resists and use thereof 有权

标题翻译：辐射敏感含硅负极抗蚀剂及其用途

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专利标题： Radiation sensitive silicon-containing negative resists and use thereof
专利标题（中）： 辐射敏感含硅负极抗蚀剂及其用途
申请号： US09785609

申请日： 2001-02-16
公开(公告)号： US06653045B2

公开(公告)日： 2003-11-25
发明人: Marie Angelopoulos , Ari Aviram , Wu-Song Huang , Ranee W. Kwong , Robert N. Lang , Qinghuang Lin , Wayne M. Moreau
申请人： Marie Angelopoulos , Ari Aviram , Wu-Song Huang , Ranee W. Kwong , Robert N. Lang , Qinghuang Lin , Wayne M. Moreau
主分类号： G03F7004
IPC分类号： G03F7004

Radiation sensitive silicon-containing negative resists and use thereof

摘要：

A negative resist composition, comprising: (a) silicon-containing polymer with pendant fused moieties selected from the group consisting of fused aliphatic moieties, homocyclic fused aromatic moieties, and heterocyclic fused aromatic and sites for reaction with a crosslinking agent, (b) an acid-sensitive crosslinking agent, and (c) a radiation-sensitive acid generator is provided. The resist composition is used to form a patterned material layer in a substrate.

摘要（中）：

负性抗蚀剂组合物，其包含：（a）具有选自稠合脂族部分，稠环稠合芳族部分和杂环稠合芳族化合物的侧链稠合部分和与交联剂反应的位点的含硅聚合物，（b）酸敏感性交联剂，和（c）辐射敏感性酸发生剂。抗蚀剂组合物用于在基材中形成图案化的材料层。

公开/授权文献

US20020115017A1 Radiation sensitive silicon-containing negative resists and use thereof 公开/授权日：2002-08-22

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