Invention Grant
- Patent Title: Multi-layered substrate with a built-in capacitor design and a method of making the same
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Application No.: US09935913Application Date: 2001-08-23
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Publication No.: US06653574B2Publication Date: 2003-11-25
- Inventor: Chen-Wen Tsai , Chung-Ju Wu , Wei-Feng Lin
- Applicant: Chen-Wen Tsai , Chung-Ju Wu , Wei-Feng Lin
- Main IPC: H05K116
- IPC: H05K116

Abstract:
A multi-layered substrate having built-in capacitors is disclosed. The substrate comprises at least one high permittivity of dielectric material filled in the through holes between the power plane and the ground plane so as to form capacitors. The built in capacitors are to decouple high frequency noise due to the voltage fluctuation.
Public/Granted literature
- US20020054467A1 Multi-layered substrate with a built-in capacitor design and a method of making the same Public/Granted day:2002-05-09
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