A method of manufacturing a semiconductor device includes thermal annealing source/drain regions with a laser, measuring a depth of the source/drain regions, and adjusting a parameter of the laser used in the thermal annealing process. After the laser is adjusted, the source/drain regions are laser thermal annealed again until a desired depth of the source/drain regions is obtained. An apparatus for processing a semiconductor device includes a chamber, a laser, a measuring device, and a controller. The semiconductor device is positioned within the chamber for processing. The laser is used to laser thermal anneal the semiconductor device within the chamber. The measuring device measures a depth of source/drain regions in the semiconductor device when the semiconductor device is within the chamber, and the controller receives measurement information from the measuring device and adjusts parameters of the laser.