发明授权
- 专利标题： Semiconductor device having solid-state image sensor with suppressed variation in impurity concentration distribution within semiconductor substrate, and method of manufacturing the same
- 专利标题（中）： 具有抑制半导体衬底内的杂质浓度分布变化的固体摄像元件的半导体装置及其制造方法
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申请号： US10232416申请日： 2002-09-03
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公开(公告)号： US06660553B2公开(公告)日： 2003-12-09
- 发明人: Masatoshi Kimura , Yasuyuki Endo
- 申请人： Masatoshi Kimura , Yasuyuki Endo
- 优先权： JP2002-066283 20020312
- 主分类号： H01L2100
- IPC分类号： H01L2100
摘要：
Photolithography is used to form a photoresist (30) having an opening over an end portion of a gate structure (15) and over a region adjacent to the gate structure (15) where a photodiode (18) is to be formed. Next, using the photoresist (30) as an implantation mask, vertical implantation of N-type impurities (31) such as phosphorus is performed at an energy of 300 to 600 keV and a dose of 1E12 to 1E14 ions/cm2, thereby forming an N-type impurity-introduced region (17) in an upper surface of a P well (11). At this time, the N-type impurities (31) can penetrate through the gate structure (15) to enter into the P well (11), allowing the N-type impurity-introduced region (17) to be also formed under the gate structure (15).