发明授权
US06661730B1 Partial selection of passive element memory cell sub-arrays for write operation
有权
无源元件存储单元子阵列的部分选择用于写操作
- 专利标题: Partial selection of passive element memory cell sub-arrays for write operation
- 专利标题(中): 无源元件存储单元子阵列的部分选择用于写操作
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申请号: US09748649申请日: 2000-12-22
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公开(公告)号: US06661730B1公开(公告)日: 2003-12-09
- 发明人: Roy E. Scheuerlein , Matthew P. Crowley
- 申请人: Roy E. Scheuerlein , Matthew P. Crowley
- 主分类号: G11C800
- IPC分类号: G11C800
摘要:
A memory array is subdivided into many sub-arrays which are separately selectable in groups, with each group containing one or more sub-arrays. The various data bits of a data set are physically spread out and mapped into a large number of associated sub-array groups. All the associated sub-array groups are preferably selected during a read cycle to simultaneously read the various bits of the data set, but when writing the data set, a smaller number of sub-array groups are activated during each of several write cycles to simultaneously write only a portion of the data set. Consequently, the read bandwidth remains high and is driven by the number of bits simultaneously read, but the write power is reduced since during each write cycle fewer bits are written. Such a memory array is particularly advantageous with passive element memory cells, such as those having antifuses.
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