- 专利标题： Method and system for integrating shallow trench and deep trench isolation structures in a semiconductor device
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申请号： US10024091申请日： 2001-12-14
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公开(公告)号： US06667226B2公开(公告)日： 2003-12-23
- 发明人: Angelo Pinto , Ricardo A. Romani , Gregory E. Howard
- 申请人： Angelo Pinto , Ricardo A. Romani , Gregory E. Howard
- 主分类号： H01L21425
- IPC分类号： H01L21425
摘要：
A semiconductor device and a method for constructing a semiconductor device is disclosed. A deep trench isolation structure (108) is formed proximate a surface of a semiconductor substrate (106). A deep trench plug (122) layer is deposited within the deep trench isolation structure (108). A shallow trench isolation structure (130) is formed where the deep trench isolation structure (108) meets the surface of the semiconductor substrate (106). A shallow trench plug layer (133) is deposited within the shallow trench isolation structure (130).
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