专利检索 ap:"Ricardo A. Romani" 第 1 页

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发明授权
Method and system for integrating shallow trench and deep trench isolation structures in a semiconductor device 有权

公开(公告)号：US06667226B2

公开(公告)日：2003-12-23

申请号：US10024091

申请日：2001-12-14

申请人： Angelo Pinto , Ricardo A. Romani , Gregory E. Howard

发明人： Angelo Pinto , Ricardo A. Romani , Gregory E. Howard

IPC分类号： H01L21425

CPC分类号： H01L21/76264 , H01L21/76283

摘要： A semiconductor device and a method for constructing a semiconductor device is disclosed. A deep trench isolation structure (108) is formed proximate a surface of a semiconductor substrate (106). A deep trench plug (122) layer is deposited within the deep trench isolation structure (108). A shallow trench isolation structure (130) is formed where the deep trench isolation structure (108) meets the surface of the semiconductor substrate (106). A shallow trench plug layer (133) is deposited within the shallow trench isolation structure (130).