发明授权
US06670653B1 InP collector InGaAsSb base DHBT device and method of forming same
失效
InP集电极InGaAsSb基体DHBT器件及其形成方法
- 专利标题： InP collector InGaAsSb base DHBT device and method of forming same
- 专利标题（中）： InP集电极InGaAsSb基体DHBT器件及其形成方法
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申请号： US09364730申请日： 1999-07-30
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公开(公告)号： US06670653B1公开(公告)日： 2003-12-30
- 发明人: Miroslav Micovic , Daniel P. Docter , Mehran Matloubian
- 申请人： Miroslav Micovic , Daniel P. Docter , Mehran Matloubian
- 主分类号： H01L21331
- IPC分类号： H01L21331
摘要：
A Double Heterojunction Bipolar Transistor (DHBT) is disclosed employing a collector of InP, an emitter of InP or other material such as InAlAs, and a base of either a selected InxGa1−xAsySb1−y compound, which preferably is lattice-matched to InP or may be somewhat compressively strained thereto, or of a superlattice which mimics the selected InGaAsSb compound. When an emitter having a conduction band non-aligned with that of the base is used, such as InAlAs, the base-emitter junction is preferably graded using either continuous or stepped changes in bulk material, or using a chirped superlattice. Doping of the junction may include one or more delta doping layer to improve the shift of conduction band discontinuities provided by a grading layer, or to permit a wider depletion region.
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