A method of making a self-aligned ferroelectric memory transistor includes preparing a substrate, shallow trench isolation, n the polysilicon; and forming a gate stack, including: depositing a layer of silicon nitride; selectively etching the silicon nitride, the bottom electrode and the polysilicon; selectively etching the polysilicon to the level of the first dielectric layer; and implanting and activating ions to form a source region and a drain region; forming a sidewall barrier layer; depositing a layer of ferroelectric material; forming a top electrode structure on the ferroelectric material; and finishing the structure, including passivation, oxide depositing and metallization.