发明授权
- 专利标题: Method for forming minimally spaced MRAM structures
- 专利标题(中): 用于形成最小间隔MRAM结构的方法
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申请号: US09842783申请日: 2001-04-27
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公开(公告)号: US06682943B2公开(公告)日: 2004-01-27
- 发明人: D. Mark Durcan , Gurtej Sandhu , Trung T. Doan , Roger Lee , Dennis Keller , Ren Earl
- 申请人: D. Mark Durcan , Gurtej Sandhu , Trung T. Doan , Roger Lee , Dennis Keller , Ren Earl
- 主分类号: H01G706
- IPC分类号: H01G706
摘要:
A method of forming minimally spaced MRAM structures is disclosed. A photolithography technique is employed to define masking patterns, on the sidewalls of which spacers are subsequently formed to reduce the distance between any of the two adjacent masking patterns. A filler material is next used to fill in the space around the masking patterns and to form filler plugs. The masking patterns and the spacers are removed using the filler plugs as a hard mask. Digit and word lines of MRAM structures are subsequently formed.
公开/授权文献
- US20020160541A1 Method for forming minimally spaced MRAM structures 公开/授权日:2002-10-31