发明授权
- 专利标题： Radiation resistant semiconductor device structure
- 专利标题（中）： 防辐射半导体器件结构
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申请号： US10233894申请日： 2002-09-03
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公开(公告)号： US06690074B1公开(公告)日： 2004-02-10
- 发明人: Bart Dierickx , Jan Bogaerts
- 申请人： Bart Dierickx , Jan Bogaerts
- 主分类号： H01L29772
- IPC分类号： H01L29772
摘要：
A semiconductor device structure is described for reducing radiation induced current flow caused by incident ionizing radiation. The structure comprises a semiconductor substrate; two or more regions of a first conductivity type in the substrate; and a guard ring of a second conductivity type for obstructing radiation induced parasitic current flow between the two or more regions of the first conductivity type. The structure may be used in a pixel, e.g. in a diode or a transistor, for increasing radiation resistance.
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