摘要:
A pixel for the detection of electromagnetic radiation or high energy particles or charge packets, in particular for detecting X-ray photons, comprises a radiation receptor for converting the radiation into a sensing signal, the pixel being adapted for performing both pulse detection and integration of the same sensing signal.
摘要:
A method and apparatus for defect pixel correction in an image sensor. The method may include calculating a median of extrapolated values of right neighboring and left neighboring pixel values of a potentially defective pixel.
摘要:
A pixel for the detection of electromagnetic radiation or impinging high energy particles, in particular for detecting X-ray photons, including a radiation receptor for converting the electromagnetic radiation or impinging high energy particles into a radiation signal, a converter for converting the radiation signal into a pulse train, and an analog accumulator for accumulating the pulses of a pulse train to an analog signal for readout. The analog accumulator is adapted such that the analog signal is non-linearly proportional to the pulse count. Such non-linear analog accumulator has the advantage of an large dynamic range.
摘要:
A pixel is provided, comprising at least one transistor, the pixel being arranged for cycling the at least one transistor between two or more bias states, e.g. inversion and accumulation, during a readout phase. Due to the cycling between the at least two bias states, the correlation over time of the 1/f noise of the readout signals is broken, thus taking multiple samples and applying an operator onto the samples can reduce the effect of the 1/f noise to arbitrary low levels.
摘要:
A method and apparatus for performing correlated double sampling to remove low frequency noise. The method and apparatus includes an active pixel of an array of active pixels comprising a sensor circuit for collecting radiation induced charges and transducing them to a measurement signal corresponding to the amount of charge collected, two memory elements for storing the measurement signal at the beginning and the end of a first integration period respectively, and at least one further memory element for storing at least the measurement signal at the beginning of a next integration period.
摘要:
A method and apparatus for reducing cross-talk between pixels in a semiconductor based image sensor. The apparatus includes neighboring pixels separated by a homojunction barrier to reduce cross-talk, or the diffusion of electrons from one pixel to another. The homojunction barrier being deep enough in relation to the other pixel structures to ensure that cross-pixel electron diffusion is minimized.
摘要:
The invention relates to a semiconductor substrate 1 and a MOS based pixel structure for detecting light. The semiconductor substrate 1 comprises a base region 2 having dopants of a first conductivity type, a first region 3 having dopants of a second conductivity type, a second region 5 having dopants of the first conductivity type at a higher doping level than the base region 2, the second region 5 forming a barrier to the first region, and the second region 5 further comprising an opening 6, wherein the opening 6 is provided between the base region 2 and the first region 3. Providing such an opening 6 in the second region 5 is advantageous, since it allows provision of a low threshold voltage.
摘要:
An active pixel comprises a sensor circuit for collecting radiation induced charges and transducing them to a measurement signal corresponding to the amount of charge collected, and a capacitor element with two nodes, where the measurement signal is present on a node of the capacitor element. The memory circuit is clocked, i.e. driven by a pulsed signal. The pulse on the memory circuit will rise the reset level at the output, which is lowered due to threshold voltage losses in the active pixel circuit, thus restoring a large signal swing. Arrays of the pixels are described, as well as a method for reading out such a pixel.
摘要:
The present invention provides an active pixel and an array of active pixels. The active pixel, and each active pixel in the array comprises: a sensor circuit for collecting radiation induced charges and for transducing them to a measurement signal corresponding to the amount of charge collected, two memory elements for storing the measurement signal at the beginning and the end of a first integration period respectively, and at least one further memory element for storing at least the measurement signal at the beginning of a next integration period. A corresponding method for performing correlated double sampling is described in which a reset level of the pixel at a beginning of the first integration period is stored in a first memory element, a measurement signal of the pixel at an end of the first integration period is stored in a second memory element, and, while performing the correlated double sampling with the stored reset level and the stored measurement signal, a reset level of the pixel at the beginning of the second integration period is stored in a third memory element.
摘要:
An image sensor device (100) is described comprising a semiconductor substrate (1), a MOS-based pixel structure and a planarization layer (30) on top. The planarization layer (30) is provided to avoid lensing due to the roughness of the pixel structure surface. The planarization layer (30) may be further optimized by adapting its thickness and refractive index to obtain anti-reflective coating properties for some regions in the image sensor device. This allows increasing the quantum efficiency and the spectral response of the image sensor device significantly.