发明授权
- 专利标题： Vertical MOSFET with ultra-low resistance and low gate charge
- 专利标题（中）： 具有超低电阻和低栅极电荷的垂直MOSFET
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申请号： US09640955申请日： 2000-08-16
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公开(公告)号： US06696726B1公开(公告)日： 2004-02-24
- 发明人: Izak Bencuya , Brian Sze-Ki Mo , Ashok Challa
- 申请人： Izak Bencuya , Brian Sze-Ki Mo , Ashok Challa
- 主分类号： H01L2976
- IPC分类号： H01L2976
摘要：
A vertical trench double-diffused metal-oxide-semiconductor (DMOS) field effect transistor characterized by a reduced drain-to-source resistance and a lower gate charge and providing a high transconductance and an enhanced frequency response.