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44 条记录 (耗时 0.02 秒)

    POWER CONNECTOR WITH LOAD CURRENT SENSING
    1.
    发明申请
    POWER CONNECTOR WITH LOAD CURRENT SENSING 审中-公开

    公开(公告)号：US20170264115A1

    公开(公告)日：2017-09-14

    申请号：US15595714

    申请日：2017-05-15

    申请人： IZAK BENCUYA

    发明人： IZAK BENCUYA

    IPC分类号： H02J7/00 ,  H01R13/713 ,  H01R13/66

    CPC分类号： H02J7/0045 ,  H01R13/6683 ,  H01R13/7037 ,  H01R13/713 ,  H02J7/0031 ,  H02J7/0042 ,  H02J7/0047 ,  H02J2007/0037 ,  H02J2007/0049

    摘要： A power connector for use in charging a battery of a device is provided. The power connector has an electromagnetic switch having terminals used to supply power from an external power source to a power adapter which is connected to the battery of the device. A power sensing circuit is coupled between the terminals of the electromagnetic switch and the power adapter, wherein the electromagnetic switch is configured to shut off power supplied to the power adapter when the power sensing circuit detects that the battery is fully charged. A reset mechanism is configured to mechanically activate the electromagnetic switch to start supplying power to the power adapter.

    Self unplugging power connector with load current sensing
    2.
    发明授权
    Self unplugging power connector with load current sensing 有权
    自负电流检测电源插头

    公开(公告)号：US09537258B2

    公开(公告)日：2017-01-03

    申请号：US14494563

    申请日：2014-09-23

    申请人： Izak Bencuya

    发明人： Izak Bencuya

    IPC分类号： H02J7/02 ,  H01R13/633 ,  H01R13/66

    CPC分类号： H01R13/633 ,  H01R13/6633 ,  H01R13/6683

    摘要： A self unplugging power connector for charging mobile devices is provided. The self unplugging power connector includes electrical contact members for an electrical outlet, a release mechanism to remove the electrical contact members from the outlet and a current sensing circuit to activate the release mechanism when the circuit senses a current reduction.

    摘要翻译： 提供一种用于为移动设备充电的自拔电源连接器。 自拔式电源连接器包括用于电源插座的电接触构件，用于将电接触构件从出口移除的释放机构以及当电路感测电流减小时激活释放机构的电流感测电路。

    Field effect transistor and method of its manufacture
    6.
    发明授权
    Field effect transistor and method of its manufacture 失效
    场效应晶体管及其制造方法

    公开(公告)号：US06429481B1

    公开(公告)日：2002-08-06

    申请号：US08970221

    申请日：1997-11-14

    申请人： Brian Sze-Ki Mo ,  Duc Chau ,  Steven Sapp ,  Izak Bencuya ,  Dean Edward Probst

    发明人： Brian Sze-Ki Mo ,  Duc Chau ,  Steven Sapp ,  Izak Bencuya ,  Dean Edward Probst

    IPC分类号： H01L2978

    CPC分类号： H01L29/7813 ,  H01L29/0619 ,  H01L29/0696 ,  H01L29/0869 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/4236 ,  H01L29/66734 ,  H01L29/7811

    摘要： A trenched field effect transistor is provided that includes (a) a semiconductor substrate, (b) a trench extending a predetermined depth into the semiconductor substrate, (c) a pair of doped source junctions, positioned on opposite sides of the trench, (d) a doped heavy body positioned adjacent each source junction on the opposite side of the source junction from the trench, the deepest portion of the heavy body extending less deeply into said semiconductor substrate than the predetermined depth of the trench, and (e) a doped well surrounding the heavy body beneath the heavy body.

    摘要翻译： 提供了沟槽场效应晶体管，其包括（a）半导体衬底，（b）在半导体衬底中延伸预定深度的沟槽，（c）位于沟槽相对侧上的一对掺杂源极结（d ）掺杂的重体，其位于与沟槽的源极结的相对侧上的每个源极结附近，重体的最深部分比沟槽的预定深度更深地延伸到所述半导体衬底中，以及（e）掺杂 很好地围着沉重的身体下面的沉重的身体。

    Fabrication of junction field effect transistor with filled grooves
    8.
    发明授权
    Fabrication of junction field effect transistor with filled grooves 失效
    具有填充沟槽的结型场效应晶体管的制造

    公开(公告)号：US4543706A

    公开(公告)日：1985-10-01

    申请号：US583514

    申请日：1984-02-24

    申请人： Izak Bencuya ,  Adrian I. Cogan

    发明人： Izak Bencuya ,  Adrian I. Cogan

    IPC分类号： H01L29/10 ,  H01L21/223 ,  H01L21/31

    CPC分类号： H01L29/1066

    摘要： Junction field effect transistor, specifically a static induction transistor and method of fabricating. A low resistivity N-type layer is formed at the surface of a high resistivity N-type epitaxial layer which has been grown on a low resistivity N-type substrate of silicon. The surface of the low resistivity N-type layer is coated with silicon nitride, portions of the silicon nitride are removed, and the silicon is etched to form parallel grooves with interposed ridges of silicon. Silicon dioxide is grown in the grooves, removed from the end walls of the grooves, and P-type zones are formed at the end walls of the grooves. Metal contacts are applied to the P-type zones at the end walls of the grooves. The grooves are filled with filler material and materials are etched away to produce a flat, planar surface with low resistivity N-type silicon of the ridges exposed in the surface and with filler material in the grooves also exposed at the surface. A large area metal contact is applied which extends across the surface and makes ohmic contact to the low resistivity N-type silicon of all the ridges.

    摘要翻译： 结型场效应晶体管，特别是静态感应晶体管及其制造方法。 在低电阻N型硅衬底上生长的高电阻率N型外延层的表面形成低电阻率N型层。 低电阻率N型层的表面涂覆有氮化硅，部分氮化硅被去除，并且蚀刻硅以形成具有插入的硅脊的平行凹槽。 在凹槽中生长二氧化硅，从凹槽的端壁移除，并且在凹槽的端壁处形成P型区域。 金属触点施加到槽的端壁处的P型区域。 凹槽填充有填充材料，并且材料被蚀刻掉以产生平坦的平坦表面，其表面露出的脊的电阻率低的N型硅，并且槽中的填充材料也暴露在表面。 施加大面积金属接触，其延伸穿过表面并与所有脊的低电阻率N型硅欧姆接触。

    Method of manufacturing a trench transistor having a heavy body region
    10.
    发明授权
    Method of manufacturing a trench transistor having a heavy body region 有权
    制造具有重体区域的沟槽晶体管的方法

    公开(公告)号：US08044463B2

    公开(公告)日：2011-10-25

    申请号：US12755966

    申请日：2010-04-07

    申请人： Brian S. Mo ,  Duc Chau ,  Steven Sapp ,  Izak Bencuya ,  Dean E. Probst

    发明人： Brian S. Mo ,  Duc Chau ,  Steven Sapp ,  Izak Bencuya ,  Dean E. Probst

    IPC分类号： H01L29/76

    CPC分类号： H01L29/7813 ,  H01L29/0619 ,  H01L29/0696 ,  H01L29/0869 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/4236 ,  H01L29/66734 ,  H01L29/7811

    摘要： A trenched field effect transistor is provided that includes (a) a semiconductor substrate, (b) a trench extending a predetermined depth into the semiconductor substrate, (c) a pair of doped source junctions, positioned on opposite sides of the trench, (d) a doped heavy body positioned adjacent each source junction on the opposite side of the source junction from the trench, the deepest portion of the heavy body extending less deeply into said semiconductor substrate than the predetermined depth of the trench, and (e) a doped well surrounding the heavy body beneath the heavy body.

    摘要翻译： 提供了沟槽场效应晶体管，其包括（a）半导体衬底，（b）在半导体衬底中延伸预定深度的沟槽，（c）位于沟槽相对侧上的一对掺杂源极结（d ）掺杂的重体，其位于与沟槽的源极结的相对侧上的每个源极结附近，重体的最深部分比沟槽的预定深度更深地延伸到所述半导体衬底中，以及（e）掺杂 很好地围着沉重的身体下面的沉重的身体。