发明授权
- 专利标题: Super-junction semiconductor device
- 专利标题(中): 超结半导体器件
-
申请号: US10099449申请日: 2002-03-15
-
公开(公告)号: US06696728B2公开(公告)日: 2004-02-24
- 发明人: Yasuhiko Onishi , Tatsuhiko Fujihira , Katsunori Ueno , Susumu Iwamoto , Takahiro Sato , Tatsuji Nagaoka
- 申请人: Yasuhiko Onishi , Tatsuhiko Fujihira , Katsunori Ueno , Susumu Iwamoto , Takahiro Sato , Tatsuji Nagaoka
- 优先权: JP2001-074188 20010315
- 主分类号: H01L2976
- IPC分类号: H01L2976
摘要:
To provide a super-junction MOSFET reducing the tradeoff relation between the on-resistance and the breakdown voltage greatly and having a peripheral structure, which facilitates reducing the leakage current in the OFF-state thereof and stabilizing the breakdown voltage thereof. The vertical MOSFET according to the invention includes a drain drift region including a first alternating conductivity type layer; a breakdown withstanding region (peripheral region) including a second alternating conductivity type layer around drain drift region, second alternating conductivity type layer being formed of layer-shaped vertically-extending n-type regions and layer-shaped vertically-extending p-type regions laminated alternately; an n-type region around second alternating conductivity type layer; and a p-type region formed in the surface portion of n-type region to reduce the leakage current in the OFF-state of the MOSFET.
公开/授权文献
- US20020171093A1 Super-junction semiconductor device 公开/授权日:2002-11-21