发明授权
- 专利标题: Enhanced probe for gathering data from semiconductor devices
- 专利标题(中): 用于从半导体器件收集数据的增强型探针
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申请号: US10187526申请日: 2002-07-02
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公开(公告)号: US06703258B2公开(公告)日: 2004-03-09
- 发明人: Theresa J. Hopson , Kumar Shiralalgi , Ronald N. Legge
- 申请人: Theresa J. Hopson , Kumar Shiralalgi , Ronald N. Legge
- 主分类号: H01L2100
- IPC分类号: H01L2100
摘要:
An enhanced conductive probe that facilitates the gathering of data and a method of fabricating the probe. The probe includes an amplifier fabricated to define the probe tip. More particularly, the probe structure is defined by an amplifier formed as one of a metal oxide semiconductor (MOS) transistor, a bipolar amplifier, or a metal semiconductor field effect transistor (MESFET), thereby providing for the amplification of the input signal and improved signal to noise ratio during operation of the probe tip.
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