发明授权
US06703258B2 Enhanced probe for gathering data from semiconductor devices 失效
用于从半导体器件收集数据的增强型探针

Enhanced probe for gathering data from semiconductor devices
摘要:
An enhanced conductive probe that facilitates the gathering of data and a method of fabricating the probe. The probe includes an amplifier fabricated to define the probe tip. More particularly, the probe structure is defined by an amplifier formed as one of a metal oxide semiconductor (MOS) transistor, a bipolar amplifier, or a metal semiconductor field effect transistor (MESFET), thereby providing for the amplification of the input signal and improved signal to noise ratio during operation of the probe tip.
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