发明授权
US06705512B2 Method of application of conductive cap-layer in flip-chip, cob, and micro metal bonding
有权
导电盖层在倒装芯片，芯棒和微金属接合中的应用方法
- 专利标题： Method of application of conductive cap-layer in flip-chip, cob, and micro metal bonding
- 专利标题（中）： 导电盖层在倒装芯片，芯棒和微金属接合中的应用方法
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申请号： US10099283申请日： 2002-03-15
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公开(公告)号： US06705512B2公开(公告)日： 2004-03-16
- 发明人: Kwok Keung Paul Ho , Simon Chooi , Yi Xu , Yakub Aliyu , Mei Sheng Zhou , John Leonard Sudijono , Subhash Gupta , Sudipto Ranendra Roy
- 申请人： Kwok Keung Paul Ho , Simon Chooi , Yi Xu , Yakub Aliyu , Mei Sheng Zhou , John Leonard Sudijono , Subhash Gupta , Sudipto Ranendra Roy
- 主分类号： B23K3102
- IPC分类号： B23K3102
摘要：
A method of bonding a bonding element to a metal bonding pad comprises the following steps. A semiconductor structure having an exposed, recessed metal bonding pad within a layer opening is provided. The layer has an upper surface. A conductive cap having a predetermined thickness is formed over the metal bonding pad. A bonding element is bonded to the conductive cap to form an electrical connection with the metal bonding pad.
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