发明授权
- 专利标题: Semiconductor device including an insulated gate type field effect transistor and method for fabricating the same
- 专利标题(中): 包括绝缘栅型场效应晶体管的半导体器件及其制造方法
-
申请号: US09929016申请日: 2001-08-15
-
公开(公告)号: US06707102B2公开(公告)日: 2004-03-16
- 发明人: Masatoshi Morikawa , Mio Shindo , Isao Yoshida , Kenichi Nagura
- 申请人: Masatoshi Morikawa , Mio Shindo , Isao Yoshida , Kenichi Nagura
- 优先权: JP2000-283168 20000919
- 主分类号: H01L2976
- IPC分类号: H01L2976
摘要:
A power MOSFET for a high frequency amplification element having good output power characteristics and high frequency characteristics is described. In the power MOSFET, a shield conductive film electrically connected to via an insulating film is arranged over a drain-offset semiconductor region. A wiring for a drain electrode is so arranged as to extent in parallel to the shield conductive film at one end side of the shield conductive film. On the other hand, a wiring for the gate electrode, a wiring for a source electrode and a gate shunt wiring are arranged in this order to extend in parallel to each other at the other end side of the shield conductive film. The shield conductive film is so formed that the thickness thereof is smaller than that of the wiring for the gate electrode. In this way, the input and output capacitances of the MOSFET can be decreased.
公开/授权文献
- US20020033508A1 Semiconductor device and method for fabricating the same 公开/授权日:2002-03-21