公开(公告)号：US06707102B2

公开(公告)日：2004-03-16

申请号：US09929016

申请日：2001-08-15

申请人： Masatoshi Morikawa ,  Mio Shindo ,  Isao Yoshida ,  Kenichi Nagura

发明人： Masatoshi Morikawa ,  Mio Shindo ,  Isao Yoshida ,  Kenichi Nagura

IPC分类号： H01L2976

CPC分类号： H01L29/402 ,  H01L29/4175 ,  H01L29/4238 ,  H01L29/7835 ,  H03F1/565 ,  H03F3/193

摘要： A power MOSFET for a high frequency amplification element having good output power characteristics and high frequency characteristics is described. In the power MOSFET, a shield conductive film electrically connected to via an insulating film is arranged over a drain-offset semiconductor region. A wiring for a drain electrode is so arranged as to extent in parallel to the shield conductive film at one end side of the shield conductive film. On the other hand, a wiring for the gate electrode, a wiring for a source electrode and a gate shunt wiring are arranged in this order to extend in parallel to each other at the other end side of the shield conductive film. The shield conductive film is so formed that the thickness thereof is smaller than that of the wiring for the gate electrode. In this way, the input and output capacitances of the MOSFET can be decreased.

摘要翻译： 描述了具有良好的输出功率特性和高频特性的高频放大元件的功率MOSFET。 在功率MOSFET中，通过绝缘膜电连接的屏蔽导电膜设置在漏极 - 偏移半导体区域上。 用于漏电极的布线被布置成与屏蔽导电膜的一端侧处的屏蔽导电膜平行地设置。 另一方面，用于栅电极的布线，用于源电极的布线和栅极分路布线依次布置成在屏蔽导电膜的另一端侧彼此平行地延伸。 屏蔽导电膜形成为使得其厚度小于栅电极的布线的厚度。 以这种方式，MOSFET的输入和输出电容可以减小。