Invention Grant
US06709715B1 Plasma enhanced chemical vapor deposition of copolymer of parylene N and comonomers with various double bonds
失效
具有各种双键的聚对二甲苯N和共聚单体共聚物的等离子体增强化学气相沉积
- Patent Title: Plasma enhanced chemical vapor deposition of copolymer of parylene N and comonomers with various double bonds
- Patent Title (中): 具有各种双键的聚对二甲苯N和共聚单体共聚物的等离子体增强化学气相沉积
-
Application No.: US09336368Application Date: 1999-06-17
-
Publication No.: US06709715B1Publication Date: 2004-03-23
- Inventor: Chi-I Lang , Shin-Puu Jeng , Yeming Jim Ma , Fong Chang , Peter Wai-Man Lee , David W. Cheung
- Applicant: Chi-I Lang , Shin-Puu Jeng , Yeming Jim Ma , Fong Chang , Peter Wai-Man Lee , David W. Cheung
- Main IPC: H05H146
- IPC: H05H146
Abstract:
A method and apparatus for depositing a low dielectric constant film by plasma assisted copolymerization of p-xylylene and a comonomer having carbon-carbon double bonds at a constant RF power level from about 0W to about 100W or a pulsed RF power level from about 20W to about 160W. The copolymer film has a dielectric constant from about 2.2 to about 2.5. Preferred comonomers include tetravinyltetramethylcyclotetrasiloxane, tetraallyloxysilane, and trivinylmethylsilane. The copolymer films include at least 1% by weight of the comonomer.
Information query
