发明授权
- 专利标题: Semiconductor devices and methods for manufacturing the same
- 专利标题(中): 半导体器件及其制造方法
-
申请号: US10160884申请日: 2002-06-03
-
公开(公告)号: US06710460B2公开(公告)日: 2004-03-23
- 发明人: Yukio Morozumi
- 申请人: Yukio Morozumi
- 优先权: JP2000-26367 20000203
- 主分类号: H01L2348
- IPC分类号: H01L2348
摘要:
In a method for manufacturing a semiconductor device in which wiring layers are formed by a damascene method, certain embodiments relate to a manufacturing method and a semiconductor device, in which a bonding pad section having a multiple-layered structure can be formed by a simple method without increasing the number of process steps. One embodiment includes a method for manufacturing a semiconductor device in which at least an uppermost wiring layer is formed by a damascene method. The method includes the following steps of: (a) forming an uppermost dielectric layer 22 in which an uppermost wiring layer is formed; (b) forming a wiring groove for the wiring layer having a specified pattern and an opening section for bonding pad section in the uppermost dielectric layer 22; (c) forming a first conduction layer for the wiring layer; (d) forming a second conduction layer over the first conduction layer, the second conduction layer composed of a different material from a material of the first conduction layer; and (e) planarizing the second conduction layer, the first conduction layer and the dielectric layer, to thereby form a wiring layer 62 composed of the first conduction layer in the wiring groove and a base conduction layer 82 composed of the first conduction layer and an exposed conduction layer 84 composed of the second conduction layer in the opening section for bonding pad section.
公开/授权文献
信息查询