MFMOS capacitors with high dielectric constant materials

Invention Grant

US06716645B2 MFMOS capacitors with high dielectric constant materials 有权

Title translation: 具有高介电常数材料的MFMOS电容器

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Patent Title: MFMOS capacitors with high dielectric constant materials
Patent Title (中): 具有高介电常数材料的MFMOS电容器
Application No.: US10319314

Application Date: 2002-12-12
Publication No.: US06716645B2

Publication Date: 2004-04-06
Inventor: Tingkai Li , Sheng Teng Hsu , Hong Ying , Bruce D. Ulrich , Yanjun Ma
Applicant: Tingkai Li , Sheng Teng Hsu , Hong Ying , Bruce D. Ulrich , Yanjun Ma
Main IPC: H01L2100
IPC: H01L2100

MFMOS capacitors with high dielectric constant materials

Abstract:

A MFMOS one transistor memory structure for ferroelectric non-volatile memory devices includes a high dielectric constant material such as ZrO2, HfO2, Y2O3, or La2O3, or the like, or mixtures thereof, to reduce the operation voltage and to increase the memory window and reliability of the device.

Abstract(Chinese):

用于铁电非易失性存储器件的MFMOS单晶体管存储器结构包括诸如ZrO 2，HfO 2，Y 2 O 3或La 2 O 3等的高介电常数材料或其混合物，以减少操作电压并增加存储窗口，设备的可靠性。

Public/Granted literature

US20030119242A1 MFMOS capacitors with high dielectric constant materials Public/Granted day:2003-06-26

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