Pre-pattern surface modification for low-k dielectrics using A H2 plasma

Invention Grant

US06720247B2 Pre-pattern surface modification for low-k dielectrics using A H2 plasma 有权

Title translation: 使用A H2等离子体的低k电介质的预图案表面改性

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Patent Title: Pre-pattern surface modification for low-k dielectrics using A H2 plasma
Patent Title (中): 使用A H2等离子体的低k电介质的预图案表面改性
Application No.: US10001327

Application Date: 2001-10-25
Publication No.: US06720247B2

Publication Date: 2004-04-13
Inventor: Brian K. Kirkpatrick , Michael Morrison , Andrew J. McKerrow , Kenneth J. Newton , Dirk N. Anderson
Applicant: Brian K. Kirkpatrick , Michael Morrison , Andrew J. McKerrow , Kenneth J. Newton , Dirk N. Anderson
Main IPC: H01J214763
IPC: H01J214763

Pre-pattern surface modification for low-k dielectrics using A H2 plasma

Abstract:

A low-k dielectric layer (104) is treated with a dry H2 plasma pretreatment to improve patterning. Resist poisoning occurs due to an interaction between low-k films (104), such as OSG, and DUV resist (130). The H2 plasma pre-treatment is performed to either pretreat a low-k dielectric (104) before forming the pattern (130) or during a rework of the pattern (130).

Abstract(Chinese):

用干H 2等离子体预处理来处理低k电介质层（104）以改善图案。由于低k膜（104）如OSG和DUV抗蚀剂（130）之间的相互作用，发生抗蚀剂中毒。执行H2等离子体预处理以在形成图案（130）之前或在图案（130）的返工期间预处理低k电介质（104）。

Public/Granted literature

US20020111017A1 Pre-pattern surface modification for low-k dielectrics using A H2 plasma Public/Granted day:2002-08-15

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