公开(公告)号：US06720247B2

公开(公告)日：2004-04-13

申请号：US10001327

申请日：2001-10-25

Applicant: Brian K. Kirkpatrick ,  Michael Morrison ,  Andrew J. McKerrow ,  Kenneth J. Newton ,  Dirk N. Anderson

Inventor： Brian K. Kirkpatrick ,  Michael Morrison ,  Andrew J. McKerrow ,  Kenneth J. Newton ,  Dirk N. Anderson

IPC: H01J214763

CPC classification number: H01L21/76835 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/76808 ,  H01L21/76826

Abstract: A low-k dielectric layer (104) is treated with a dry H2 plasma pretreatment to improve patterning. Resist poisoning occurs due to an interaction between low-k films (104), such as OSG, and DUV resist (130). The H2 plasma pre-treatment is performed to either pretreat a low-k dielectric (104) before forming the pattern (130) or during a rework of the pattern (130).

Abstract translation: 用干H 2等离子体预处理来处理低k电介质层（104）以改善图案。 由于低k膜（104）如OSG和DUV抗蚀剂（130）之间的相互作用，发生抗蚀剂中毒。 执行H2等离子体预处理以在形成图案（130）之前或在图案（130）的返工期间预处理低k电介质（104）。