Invention Grant
US06720570B2 Gallium nitride-based semiconductor light emitting device 有权
氮化镓系半导体发光元件

  • Patent Title: Gallium nitride-based semiconductor light emitting device
  • Patent Title (中): 氮化镓系半导体发光元件
  • Application No.: US10123287
    Application Date: 2002-04-17
  • Publication No.: US06720570B2
    Publication Date: 2004-04-13
  • Inventor: Chia-Ming LeeJen-Inn Chyi
  • Applicant: Chia-Ming LeeJen-Inn Chyi
  • Main IPC: H01L2906
  • IPC: H01L2906
Gallium nitride-based semiconductor light emitting device
Abstract:
According to a preferred embodiment of the present invention, there is provided a novel and optimal semiconductor light emitting device comprising a substrate, an n layer disposed co-extensively on the substrate, an n++ layer disposed non-extensively and flush on one side of the n layer. Furthermore, a p+ layer is disposed co-extensively on the n++ layer of the LED according to the invention, with a p layer further disposed co-extensively on the p+ layer. A p cladding layer is disposed co-extensively on the p layer. A multiple quantum well (MQW) layer is disposed co-extensively on the p cladding layer, and an n cladding layer is further disposed co-extensively on the MQW layer. A second n layer is disposed co-extensively on the n cladding layer. An n+ layer is disposed co-extensively on the second n layer of the LED according to the invention. After partially etching the device, an n electrode is formed opposite n++ layer non-extensively on the surface of n layer, and a second n electrode is formed non-extensively (without etching) upon the n+ layer.
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