公开(公告)号：US08101447B2

公开(公告)日：2012-01-24

申请号：US11961478

申请日：2007-12-20

Applicant: Hung-Cheng Lin ,  Chia-Ming Lee ,  Jen-Inn Chyi

Inventor： Hung-Cheng Lin ,  Chia-Ming Lee ,  Jen-Inn Chyi

IPC: H01L33/20

CPC classification number: H01L33/10 ,  H01L33/20

Abstract: The present invention discloses a light emitting diode (LED) element and a method for fabricating the same, which can promote light extraction efficiency of LED, wherein a substrate is etched to obtain basins with inclined natural crystal planes, and an LED epitaxial structure is selectively formed inside the basin. Thereby, an LED element having several inclines is obtained. Via the inclines, the probability of total internal reflection is reduced, and the light extraction efficiency of LED is promoted.

Abstract translation: 本发明公开了一种发光二极管（LED）元件及其制造方法，其可以提高LED的光提取效率，其中蚀刻基板以获得具有倾斜的自然晶体面的池，并且LED外延结构选择性地 形成在盆地内。 由此，得到具有多个倾斜的LED元件。 通过倾斜，全内反射的概率降低，LED的光提取效率得到提升。

公开(公告)号：US07598105B2

公开(公告)日：2009-10-06

申请号：US11963517

申请日：2007-12-21

Applicant: Chia-Ming Lee ,  Hung-Cheng Lin ,  Jen-Inn Chyi

Inventor： Chia-Ming Lee ,  Hung-Cheng Lin ,  Jen-Inn Chyi

IPC: H01L21/00

CPC classification number: H01L33/12 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02647 ,  H01L21/02658 ,  H01L33/22

Abstract: The present invention discloses a light emitting diode structure and a method for fabricating the same. In the present invention, a substrate is placed in a solution to form a chemical reaction layer. Next, the substrate is etched to form a plurality of concave zones and a plurality of convex zones with the chemical reaction layer overhead. Next, the chemical reaction layer is removed to form an irregular geometry of the concave zones and convex zones on the surface of the substrate. Then, a semiconductor light emitting structure is epitaxially formed on the surface of the substrate. Thereby, the present invention can achieve a light emitting diode structure having improved internal and external quantum efficiencies.

Abstract translation: 本发明公开了一种发光二极管结构及其制造方法。 在本发明中，将基板放置在溶液中以形成化学反应层。 接下来，蚀刻基板以形成具有化学反应层顶部的多个凹区域和多个凸区域。 接下来，去除化学反应层，以形成衬底表面上的凹区和凸区的不规则几何形状。 然后，在衬底的表面上外延形成半导体发光结构。 因此，本发明可以实现具有改善的内部和外部量子效率的发光二极管结构。

公开(公告)号：US07335523B2

公开(公告)日：2008-02-26

申请号：US11339251

申请日：2006-01-25

Applicant: Yu-Chuan Liu ,  Chia-Ming Lee ,  I-Ling Chen ,  Jen-Inn Chyi

Inventor： Yu-Chuan Liu ,  Chia-Ming Lee ,  I-Ling Chen ,  Jen-Inn Chyi

IPC: H01L21/00

CPC classification number: H01L33/507 ,  H01L25/0756 ,  H01L2224/32245 ,  H01L2224/32257 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A light-emitting device comprising a light-emitting unit including a plurality of first connecting pads, a base substrate including a plurality of second connecting pads, and a plurality of conductive bumps that connect the first connecting pads of the light-emitting unit to the second connecting pads of the base substrate. In the manufacturing process, a reflow process is performed to bond the conductive bumps to the first and second connecting pads. The light-emitting unit is configured to emit a first light radiation upon the application of an electric current flow, and the base substrate is configured to emit a second light radiation when stimulated by the first light radiation.

Abstract translation: 一种发光装置，包括包括多个第一连接焊盘的发光单元，包括多个第二连接焊盘的基板，以及将所述发光单元的第一连接焊盘连接到所述发光单元的多个导电凸块 基底基板的第二连接焊盘。 在制造过程中，执行回流处理以将导电凸块接合到第一和第二连接焊盘。 发光单元被配置为在施加电流时发射第一光辐射，并且基底基板被配置为当被第一光辐射刺激时发射第二光辐射。

公开(公告)号：US20050279990A1

公开(公告)日：2005-12-22

申请号：US10870347

申请日：2004-06-17

Applicant: Yu-Chuan Liu ,  Chia-Ming Lee ,  I-Ling Chen ,  Jen-Inn Chyi

Inventor： Yu-Chuan Liu ,  Chia-Ming Lee ,  I-Ling Chen ,  Jen-Inn Chyi

IPC: H01L29/06 ,  H01L33/38 ,  H01L33/46 ,  H01L33/62

CPC classification number: H01L33/38 ,  H01L33/46 ,  H01L33/62 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/16 ,  H01L2924/00014 ,  H01L2224/05599 ,  H01L2224/05099

Abstract: A light-emitting device comprises a multi-layer structure including one or more active layer configured to irradiate light in response to the application of an electric signal, a transparent passivation layer laid over an outmost surface of the multi-layer stack, a reflector layer laid over the passivation layer, and a plurality of electrode pads coupled with the multi-layer structure. In a manufacture process of the light-emitting device, the reflector layer and the passivation layer are patterned to form at least one opening exposing an area of the multi-layer structure. One electrode pad is formed through the opening of the reflector layer and the passivation layer to connect with the multi-layer structure

Abstract translation: 发光装置包括多层结构，其包括响应于电信号的施加而被配置为照射光的一个或多个有源层，布置在多层堆叠的最外表面上的透明钝化层，反射层 铺设在钝化层上，以及与多层结构耦合的多个电极焊盘。 在发光器件的制造工艺中，对反射层和钝化层进行构图以形成暴露多层结构区域的至少一个开口。 一个电极焊盘通过反射层的开口和钝化层形成，以与多层结构连接

公开(公告)号：US20090298213A1

公开(公告)日：2009-12-03

申请号：US12538427

申请日：2009-08-10

Applicant: Chia-Ming LEE ,  Hung-Cheng Lin ,  Jen-Inn Chyi

Inventor： Chia-Ming LEE ,  Hung-Cheng Lin ,  Jen-Inn Chyi

IPC: H01L33/00

CPC classification number: H01L33/12 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02647 ,  H01L21/02658 ,  H01L33/22

Abstract: The present invention discloses a light emitting diode structure and a method for fabricating the same. In the present invention, a substrate is placed in a solution to form a chemical reaction layer. Next, the substrate is etched to form a plurality of concave zones and a plurality of convex zones with the chemical reaction layer overhead. Next, the chemical reaction layer is removed to form an irregular geometry of the concave zones and convex zones on the surface of the substrate. Then, a semiconductor light emitting structure is epitaxially formed on the surface of the substrate. Thereby, the present invention can achieve a light emitting diode structure having improved internal and external quantum efficiencies.

公开(公告)号：US20060189019A1

公开(公告)日：2006-08-24

申请号：US11063479

申请日：2005-02-23

Applicant: Chia-Ming Lee ,  Tsung Chen ,  I-Ling Chen ,  Yu-Chuan Liu ,  Jen-Inn Chyi

Inventor： Chia-Ming Lee ,  Tsung Chen ,  I-Ling Chen ,  Yu-Chuan Liu ,  Jen-Inn Chyi

IPC: H01L21/00

CPC classification number: C30B29/406 ,  C30B25/02 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02661

Abstract: In a method of forming a crystalline GaN-based material, a first nucleation layer is formed on a substrate at a first temperature, followed with forming a second nucleation layer at a second temperature different from the first temperature. The first and second nucleation layers are composed of AlxInyGa(1-x-y)N. Subsequently, a layer of a crystalline GaN-based compound is epitaxy grown on the second nucleation layer.

Abstract translation: 在形成结晶GaN基材料的方法中，在第一温度下在基板上形成第一成核层，随后在与第一温度不同的第二温度下形成第二成核层。 第一和第二成核层由Al x Ga y（1-x-y）N组成。 随后，在第二成核层上生长一层结晶的GaN基化合物外延生长。

公开(公告)号：US20060119668A1

公开(公告)日：2006-06-08

申请号：US11339251

申请日：2006-01-25

Applicant: Yu-Chuan Liu ,  Chia-Ming Lee ,  I-Ling Chen ,  Jen-Inn Chyi

Inventor： Yu-Chuan Liu ,  Chia-Ming Lee ,  I-Ling Chen ,  Jen-Inn Chyi

IPC: B41J2/12

CPC classification number: H01L33/507 ,  H01L25/0756 ,  H01L2224/32245 ,  H01L2224/32257 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A light-emitting device comprising a light-emitting unit including a plurality of first connecting pads, a base substrate including a plurality of second connecting pads, and a plurality of conductive bumps that connect the first connecting pads of the light-emitting unit to the second connecting pads of the base substrate. In the manufacturing process, a reflow process is performed to bond the conductive bumps to the first and second connecting pads. The light-emitting unit is configured to emit a first light radiation upon the application of an electric current flow, and the base substrate is configured to emit a second light radiation when stimulated by the first light radiation.

Abstract translation: 一种发光装置，包括包括多个第一连接焊盘的发光单元，包括多个第二连接焊盘的基板，以及将所述发光单元的第一连接焊盘连接到所述发光单元的多个导电凸块 基底基板的第二连接焊盘。 在制造过程中，执行回流处理以将导电凸块接合到第一和第二连接焊盘。 发光单元被配置为在施加电流时发射第一光辐射，并且基底基板被配置为当被第一光辐射刺激时发射第二光辐射。

公开(公告)号：US20050224813A1

公开(公告)日：2005-10-13

申请号：US10815091

申请日：2004-03-31

Applicant: Yu-Chuan Liu ,  Chia-Ming Lee ,  I-Ling Chen ,  Jen-Inn Chyi

Inventor： Yu-Chuan Liu ,  Chia-Ming Lee ,  I-Ling Chen ,  Jen-Inn Chyi

IPC: B41J2/12 ,  H01L25/075 ,  H01L33/50

CPC classification number: H01L33/507 ,  H01L25/0756 ,  H01L2224/32245 ,  H01L2224/32257 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A light-emitting device comprises a light-emitting unit including a plurality of first connecting pads, a base substrate including a plurality of second connecting pads, and a plurality of conductive bumps that connect the first connecting pads of the light-emitting unit to the second connecting pads of the base substrate. In the manufacturing process, a reflow process is performed to bond the conductive bumps to the first and second connecting pads. The light-emitting unit is configured to emit a first light radiation upon the application of an electric current flow, and the base substrate is configured to emit a second light radiation when stimulated by the first light radiation.

Abstract translation: 发光装置包括：发光单元，包括多个第一连接焊盘;基板，包括多个第二连接焊盘;以及多个导电凸块，其将所述发光单元的第一连接焊盘连接到 基底基板的第二连接焊盘。 在制造过程中，执行回流处理以将导电凸块接合到第一和第二连接焊盘。 发光单元被配置为在施加电流时发射第一光辐射，并且基底基板被配置为当被第一光辐射刺激时发射第二光辐射。

公开(公告)号：US20050224812A1

公开(公告)日：2005-10-13

申请号：US10814872

申请日：2004-03-31

Applicant: Yu-Chuan Liu ,  Chia-Ming Lee ,  I-Ling Chen ,  Jen-Inn Chyi

Inventor： Yu-Chuan Liu ,  Chia-Ming Lee ,  I-Ling Chen ,  Jen-Inn Chyi

IPC: H01L27/15 ,  H01L33/32 ,  H01L33/40 ,  H01L33/42 ,  H01L33/50

CPC classification number: H01L33/508 ,  H01L33/32 ,  H01L33/40 ,  H01L33/42 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/00014

Abstract: A light-emitting device includes a multi-layer structure configured to emit a first light radiation, and a cap layer covering a surface area of the multi-layer structure while leaving exposed electrode areas defined thereon, wherein the cap layer is made of a material capable of emitting at least one second light radiation when stimulated by the first light radiation. The cap layer, being made of a material blend incorporating a passivation material and a luminescent material compound, is coated on the multi-layer structure.

Abstract translation: 发光器件包括被配置为发射第一光辐射的多层结构，以及覆盖多层结构的表面区域同时留下限定在其上的暴露的电极区域的覆盖层，其中，盖层由材料制成 能够在被第一光辐射刺激时发射至少一个第二光辐射。 覆盖层由包含钝化材料和发光材料化合物的材料混合物制成，涂覆在多层结构上。

公开(公告)号：US06881602B2

公开(公告)日：2005-04-19

申请号：US10410989

申请日：2003-04-08

Applicant: Chia-Ming Lee ,  Jen-Inn Chyi

Inventor： Chia-Ming Lee ,  Jen-Inn Chyi

IPC: H01L33/00 ,  H01L33/02 ,  H01L33/14 ,  H01L21/00

CPC classification number: H01L33/025 ,  H01L33/0016 ,  H01L33/02 ,  H01L33/14

Abstract: According to a preferred embodiment of the present invention, there is provided a novel and optimal semiconductor light emitting device comprising a substrate, an n layer disposed co-extensively on the substrate, an n++ layer disposed non-extensively and flush on one side of the n layer. Furthermore, a p+ layer is disposed co-extensively on the n++ layer of the LED according to the invention, with a p layer further disposed co-extensively on the p+ layer. A p cladding layer is disposed co-extensively on the p layer. A multiple quantum well (MQW) layer is disposed co-extensively on the p cladding layer, and an n cladding layer is further disposed co-extensively on the MQW layer. A second n layer is disposed co-extensively on the n cladding layer. An n+ layer is disposed co-extensively on the second n layer of the LED according to the invention. After partially etching the device, an n electrode is formed opposite n++ layer non-extensively on the surface of n layer, and a second n electrode is formed non-extensively (without etching) upon the n+ layer.

Abstract translation: 根据本发明的优选实施例，提供了一种新颖且最佳的半导体发光器件，其包括基底，共同设置在基底上的n层，设置非基底层的n + 在n层的一侧上非常平滑地冲洗。 此外，根据本发明，将ap + +层共同地布置在LED的n + ++层上，其中ap层进一步同时布置在p < SUP> + 层。 p包层共同设置在p层上。 多量子阱（MQW）层共同设置在p包覆层上，并且n包覆层进一步同时布置在MQW层上。 第n层被共同设置在n包层上。 根据本发明，n + SUP层被共同地布置在LED的第二n层上。 在部分蚀刻该器件之后，在n层的表面上非常广泛地形成n电极，并且在n层上形成第二n电极（非蚀刻） ^{+ 层。}