发明授权
US06720602B2 Dynamic random access memory (DRAM) cell with folded bitline vertical transistor and method of producing the same
有权
具有折叠位线垂直晶体管的动态随机存取存储器（DRAM）单元及其制造方法
- 专利标题： Dynamic random access memory (DRAM) cell with folded bitline vertical transistor and method of producing the same
- 专利标题（中）： 具有折叠位线垂直晶体管的动态随机存取存储器（DRAM）单元及其制造方法
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申请号： US10101992申请日： 2002-03-21
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公开(公告)号： US06720602B2公开(公告)日： 2004-04-13
- 发明人: Lawrence A. Clevenger , Louis Lu-Chen Hsu , Jack A. Mandelman , Carl D. Radens
- 申请人： Lawrence A. Clevenger , Louis Lu-Chen Hsu , Jack A. Mandelman , Carl D. Radens
- 主分类号： H01L27108
- IPC分类号： H01L27108
摘要：
A semiconductor device and a method for forming the semiconductor device, include forming a mandrel, forming spacer wordline conductors on sidewalls of the mandrel, separating, by using a trim mask, adjacent spacer wordline conductors, and providing a contact area to contact alternating ones of pairs of the spacer wordline conductors.
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