Method of forming a germanium film on a semiconductor substrate that includes the formation of a graded silicon-germanium buffer layer prior to the formation of a germanium layer

发明授权

US06723622B2 Method of forming a germanium film on a semiconductor substrate that includes the formation of a graded silicon-germanium buffer layer prior to the formation of a germanium layer 有权

标题翻译：在半导体衬底上形成锗膜的方法，包括在形成锗层之前形成梯度硅 - 锗缓冲层

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专利标题： Method of forming a germanium film on a semiconductor substrate that includes the formation of a graded silicon-germanium buffer layer prior to the formation of a germanium layer
专利标题（中）： 在半导体衬底上形成锗膜的方法，包括在形成锗层之前形成梯度硅 - 锗缓冲层
申请号： US10081099

申请日： 2002-02-21
公开(公告)号： US06723622B2

公开(公告)日： 2004-04-20
发明人: Anand Murthy , Ravindra Soman , Boyan Boyanov
申请人： Anand Murthy , Ravindra Soman , Boyan Boyanov
主分类号： H01L21365
IPC分类号： H01L21365

Method of forming a germanium film on a semiconductor substrate that includes the formation of a graded silicon-germanium buffer layer prior to the formation of a germanium layer

摘要：

A composite of germanium film for a semiconductor device and methods of making the same. The method comprises growing a graded germanium film on a semiconductor substrate in a deposition chamber while simultaneously decreasing a deposition temperature and decreasing a silicon source gas and increasing a germanium source gas over a predetermined amount of time. The graded germanium film comprises an ultra-thin silicon-germanium buffer layer and a germanium film.

摘要（中）：

用于半导体器件的锗膜的复合材料及其制造方法。该方法包括在沉积室中在半导体衬底上生长渐变锗膜，同时降低沉积温度并减少硅源气体并增加锗源气体超过预定时间量。分级锗膜包括超薄硅 - 锗缓冲层和锗膜。

公开/授权文献

US20030157787A1 METHOD OF FORMING A GERMANIUM FILM ON A SEMICONDUCTOR SUBSTRATE THAT INCLUDES THE FORMATION OF A GRADED SILICON-GERMANIUM BUFFER LAYER PRIOR TO THE FORMATION OF A GERMANIUM LAYER 公开/授权日：2003-08-21

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