Invention Grant
- Patent Title: Cold cathode forming process
- Patent Title (中): 冷阴极成型工艺
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Application No.: US09988396Application Date: 2001-11-19
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Publication No.: US06726517B2Publication Date: 2004-04-27
- Inventor: Yuka Yamada , Takehito Yoshida , Nobuyasu Suzuki , Toshiharu Makino , Yoshikazu Hori
- Applicant: Yuka Yamada , Takehito Yoshida , Nobuyasu Suzuki , Toshiharu Makino , Yoshikazu Hori
- Priority: JP2000-352324 20001120
- Main IPC: H01J900
- IPC: H01J900

Abstract:
The object of the present invention is to form the fine structure on a cathode surface homogeneously and reproducibly to realize the increased emission current value and stability with a simple process in the electron emission element forming process. An electron emission part of an electron emission element that is a crystalline thin film of electron emissive material formed in self-aligning fashion by means of a laser ablation process, in which a laser beam is irradiated onto a target material and the material ejected and emitted from the target material is deposited to form a thin film on a substrate facing to the target, is used as the thin film electron source. The above-mentioned structure is effective to realize the low electron emission threshold value and the increased emission current value and stability, and realize the reduced cost with the structure that is simpler than the conventional structure.
Public/Granted literature
- US20020061694A1 Cold cathode forming process and electron emission element, and applied device of the same Public/Granted day:2002-05-23
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