发明授权
- 专利标题: Cold cathode forming process
- 专利标题(中): 冷阴极成型工艺
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申请号: US09988396申请日: 2001-11-19
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公开(公告)号: US06726517B2公开(公告)日: 2004-04-27
- 发明人: Yuka Yamada , Takehito Yoshida , Nobuyasu Suzuki , Toshiharu Makino , Yoshikazu Hori
- 申请人: Yuka Yamada , Takehito Yoshida , Nobuyasu Suzuki , Toshiharu Makino , Yoshikazu Hori
- 优先权: JP2000-352324 20001120
- 主分类号: H01J900
- IPC分类号: H01J900
摘要:
The object of the present invention is to form the fine structure on a cathode surface homogeneously and reproducibly to realize the increased emission current value and stability with a simple process in the electron emission element forming process. An electron emission part of an electron emission element that is a crystalline thin film of electron emissive material formed in self-aligning fashion by means of a laser ablation process, in which a laser beam is irradiated onto a target material and the material ejected and emitted from the target material is deposited to form a thin film on a substrate facing to the target, is used as the thin film electron source. The above-mentioned structure is effective to realize the low electron emission threshold value and the increased emission current value and stability, and realize the reduced cost with the structure that is simpler than the conventional structure.
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