发明授权
- 专利标题: Formation of thin film capacitors
- 专利标题(中): 薄膜电容器的形成
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申请号: US09733815申请日: 2001-03-30
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公开(公告)号: US06728092B2公开(公告)日: 2004-04-27
- 发明人: Andrew T. Hunt , Tzyy Jiuan Hwang , Helmut G. Hornis , Wen-Yi Lin
- 申请人: Andrew T. Hunt , Tzyy Jiuan Hwang , Helmut G. Hornis , Wen-Yi Lin
- 主分类号: H01G4005
- IPC分类号: H01G4005
摘要:
Thin layer capacitors are formed from a first flexible metal layer, a dielectric layer between about 0.03 and about 2 microns deposited thereon, and a second flexible metal layer deposited on the dielectric layer. The first flexible metal layer may either be a metal foil, such as a copper, aluminum, or nickel foil, or a metal layer deposited on a polymeric support sheet. Depositions of the layers is by or is facilitate by combustion chemical vapor deposition or controlled atmosphere chemical vapor deposition.
公开/授权文献
- US20020145845A1 Formation of thin film capacitors 公开/授权日:2002-10-10
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