发明授权
US06734501B2 Fully inverted type SOI-MOSFET capable of increasing the effective mutual conductance
有权
能够提高有效互导的全反相型SOI-MOSFET
- 专利标题： Fully inverted type SOI-MOSFET capable of increasing the effective mutual conductance
- 专利标题（中）： 能够提高有效互导的全反相型SOI-MOSFET
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申请号： US10058221申请日： 2002-01-29
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公开(公告)号： US06734501B2公开(公告)日： 2004-05-11
- 发明人: Takuo Sugano , Toru Toyabe , Tatsuro Hanajiri , Akira Saito , Yoshiro Akagi
- 申请人： Takuo Sugano , Toru Toyabe , Tatsuro Hanajiri , Akira Saito , Yoshiro Akagi
- 优先权： JP2001-021582 20010130
- 主分类号： H01L310392
- IPC分类号： H01L310392
摘要：
A fully inverted type SOI-MOSFET has a channel region 18 constructed of a portion that belongs to a top silicon layer 13 and is located just under a gate electrode 15 and a source region 16 and a drain region 17, which belong to the top silicon layer 13 and are located adjacent to this channel region 18. The channel region 18 is inverted throughout the entire thickness during operation. The source region 16 has a source resistance RS, which satisfies a relation that (1/gm)>RS with respect to the mutual conductance gm of the channel region 18 itself. According to this fully inverted type SOI-MOSFET, the effective mutual conductance (Gm) can be increased.
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