- 专利标题: Polysilicon opening polish
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申请号: US10008683申请日: 2001-12-04
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公开(公告)号: US06743683B2公开(公告)日: 2004-06-01
- 发明人: Chris E. Barns , Mark Doczy
- 申请人: Chris E. Barns , Mark Doczy
- 主分类号: H01L21336
- IPC分类号: H01L21336
摘要:
Fabricating a semiconductor structure includes providing a semiconductor substrate, forming a silicide layer over the substrate, and removing a portion of the silicide layer by chemical mechanical polishing. The fabrication of the structure can also include forming a dielectric layer after forming the silicide layer, and removing a portion of the dielectric layer by chemical mechanical polishing before removing the portion of the silicide layer.
公开/授权文献
- US20040038535A1 Polysilicon opening polish 公开/授权日:2004-02-26