Invention Grant
US06743735B2 Photoresist removal from alignment marks through wafer edge exposure
失效
通过晶片边缘曝光从对准标记去除光致抗蚀剂
- Patent Title: Photoresist removal from alignment marks through wafer edge exposure
- Patent Title (中): 通过晶片边缘曝光从对准标记去除光致抗蚀剂
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Application No.: US10102288Application Date: 2002-03-19
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Publication No.: US06743735B2Publication Date: 2004-06-01
- Inventor: Po-Tao Chu , Hsin-Yuan Chen , Chung-Jen Chen , Tai-Ming Yang , Cheng-Ming Wu
- Applicant: Po-Tao Chu , Hsin-Yuan Chen , Chung-Jen Chen , Tai-Ming Yang , Cheng-Ming Wu
- Main IPC: H01L21302
- IPC: H01L21302

Abstract:
Removing photoresist from alignment marks on a semiconductor wafer using a wafer edge exposure process is disclosed. The alignment marks on the wafer are covered by photoresist used in conjunction with semiconductor processing of one or more layers deposited on the semiconductor wafer. One or more parts of the edge of the wafer are exposed to remove the photoresist from these parts and thus reveal alignment marks on the wafer. The exposure of the one or more parts of the wafer is accomplished without performing a photolithographic clear out process. Rather, a wafer edge exposure (WEE) process is inventively utilized. Once the WEE process is performed, subsequent layers may be deposited by aligning them using the revealed alignment marks.
Public/Granted literature
- US20030181058A1 Photoresist removal from alignment marks through wafer edge exposure Public/Granted day:2003-09-25
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