发明授权
- 专利标题： Process for producing sputtering target materials
- 专利标题（中）： 溅射靶材的制造工艺
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申请号： US10165569申请日： 2002-06-07
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公开(公告)号： US06746553B2公开(公告)日： 2004-06-08
- 发明人: Lijun Yao , Tadao Ueda
- 申请人： Lijun Yao , Tadao Ueda
- 优先权： JP11-293573 19991015; JP2000-129739 20000428; JP2001-316803 20000428
- 主分类号： C22F100
- IPC分类号： C22F100
摘要：
The invention includes methods of reducing grain sizes of materials, and methods of forming sputtering targets. The invention includes a method for producing a sputtering target material in which a metallic material is subjected to plastic working at a processing percentage of at least 5% and a processing rate of at least 100%/second. In particular applications the metallic material comprises one or more of aluminum, copper and titanium.
公开/授权文献
- US20020189728A1 Process for producing sputtering target materials 公开/授权日：2002-12-19