公开(公告)号：US06685783B1

公开(公告)日：2004-02-03

申请号：US09889939

申请日：2001-07-25

申请人： Daniel Nunes ,  Patrick Olier

发明人： Daniel Nunes ,  Patrick Olier

IPC分类号： C22F100

CPC分类号： B21C37/042 ,  B21C37/04 ,  B23B1/00 ,  C21D2201/01 ,  C21D2261/00 ,  C22F1/006 ,  Y10T82/10 ,  Y10T409/50082

摘要： This invention relates to a process for manufacturing, shaping, and machining of a part made of a shape memory alloy, comprising a single step in which the said part is fabricated, shaped and machined simultaneously in a single operation by a cutting machining process such as turning. The invention is also related to the part prepared by this process, which is particularly a helical spring with adjacent turns. In particular, this part may be used in actuator or actuator/sensor type devices.

摘要翻译： 本发明涉及一种用于制造，成型和加工由形状记忆合金制成的零件的方法，该方法包括一个步骤，其中所述部件通过切割加工工艺在单次操作中同时制造，成形和加工，例如 转动 本发明还涉及通过该方法制备的部件，其特别是具有相邻匝的螺旋弹簧。 特别地，该部件可以用在致动器或致动器/传感器类型的装置中。

公开(公告)号：US06660107B2

公开(公告)日：2003-12-09

申请号：US10224835

申请日：2002-08-20

申请人： Baolute Ren

发明人： Baolute Ren

IPC分类号： C22F100

CPC分类号： C22C21/00

摘要： A corrosion resistant aluminum alloy has controlled amounts of iron, manganese, chromium, and titanium along with levels of copper, silicon, nickel, and no more than impurity levels of zinc. The alloy chemistry is tailored such that the electrolytic potential of the grain boundaries matches the alloy matrix material to reduce intergranular corrosion. The alloy is particularly suited for the manufacture of tubing for heat exchangers using extrusion and brazing techniques.

公开(公告)号：US06428638B2

公开(公告)日：2002-08-06

申请号：US09832448

申请日：2001-04-10

申请人： Lijun Yao ,  Tadao Ueda

发明人： Lijun Yao ,  Tadao Ueda

IPC分类号： C22F100

CPC分类号： C22F1/183 ,  C22F1/04 ,  C22F1/08 ,  C23C14/3414

摘要： The invention includes methods of reducing grain sizes of materials, and methods of forming sputtering targets. The invention includes a method for producing a sputtering target material in which a metallic material is subjected to plastic working at a processing percentage of at least 5% and a processing rate of at least 100%/second. In particular applications the metallic material comprises one or more of aluminum, copper and titanium.

公开(公告)号：US06193822B1

公开(公告)日：2001-02-27

申请号：US09099205

申请日：1998-06-18

申请人： Tomotaka Nagashima ,  Michio Okabe ,  Toshiharu Noda

发明人： Tomotaka Nagashima ,  Michio Okabe ,  Toshiharu Noda

IPC分类号： C22F100

CPC分类号： F01L3/02

摘要： Disclosed is a method of manufacturing a diesel engine valve for intake and exhaust having good corrosion resistance and increased valve face strength, and therefore, of improved durability. A Ni-base heat resistant alloy of strong precipitation hardening type or an Fe-base heat resistant alloy of the same type is used as the material. The method comprises hot forging to prepare a blank form of the valve to be manufactured, solution treatment, cold processing to form the face part, and age-treating for increasing the hardness of the face part.

摘要翻译： 公开了一种制造具有良好的耐腐蚀性和增加的阀面强度的进排气的柴油发动机阀的方法，因此具有改进的耐久性。 使用强沉淀硬化型Ni基耐热合金或相同类型的Fe基耐热合金作为材料。 该方法包括热锻，以制备要制造的阀的空白形式，固溶处理，冷加工以形成面部部件，以及用于增加面部部件的硬度的老化处理。

公开(公告)号：US06827796B2

公开(公告)日：2004-12-07

申请号：US10035683

申请日：2001-11-01

申请人： Robert A. Holzl ,  Robert J. Shinavski

发明人： Robert A. Holzl ,  Robert J. Shinavski

IPC分类号： C22F100

CPC分类号： C23C16/45523 ,  C22C1/02 ,  C22C27/04 ,  C23C16/01 ,  C23C16/08 ,  C23C16/30

摘要： A family of extremely fine-grained alloys are used to make coatings or free-standing bodies having desirable properties for use as a heat-resistant and wear-resistant material. In an illustrative embodiment, the alloys are comprised of a multiplicity of alternate, microcrystalline or nanocrystalline films of tungsten metal and tungsten compound. The tungsten compound film may be comprised of a tungsten carbide or a tungsten boride. The tungsten films are the primary films. Their desirable characteristics, in addition to their very fine crystalline habit, per se, are the high strength, high hardness, high resilience, and high fracture energy which these fine crystallites foster. They may be manufactured by a chemical vapor deposition process in which reactive gas flows are rapidly switched to produce alternate films with abrupt hetero-junctions and thereby to produce the useful micro-crystalline habit. The unique synthesis method allows effective control of critical flaw size. The structure is such that the primary films may be made sufficiently thick so as to assure some desirable ductile behavior, but sufficiently thin so as to have high yield strength by dint of their microcrystalline size, and as to limit the size of any flaws. The secondary films are made of enough thickness to prevent the epitaxial growth from one primary film to the next-deposited primary film and thin enough so that they can not contain a flaw of critical size. In addition, the exterior surface of any body made by this method may have a sufficiently smooth surface that the strength of the body is determined by the bulk properties of the material and not by surface flaws.

摘要翻译： 一类非常细小的合金被用于制造具有期望性能的涂层或独立体，用作耐热和耐磨材料。 在说明性实施例中，合金由钨金属和钨化合物的多个交替的微晶或纳米晶体膜组成。 钨化合物膜可以由碳化钨或硼化钨组成。 钨膜是初级膜。 除了它们非常细的结晶习性之外，它们的理想特性本身是这些微晶所促成的高强度，高硬度，高弹性和高断裂能。 它们可以通过化学气相沉积工艺制造，其中反应气体流动快速切换以产生具有突变异质结的交替膜，从而产生有用的微晶习性。 独特的合成方法可以有效控制关键缺陷大小。 该结构使得初级膜可以制得足够厚，以确保一些期望的延展性，但是足够薄，以便通过它们的微晶尺寸具有高屈服强度，并限制任何缺陷的尺寸。 二次膜由足够的厚度制成，以防止从一个初级膜到下一次沉积的初级膜的外延生长，并且足够薄，使得它们不能包含临界尺寸的缺陷。 此外，通过该方法制造的任何主体的外表面可以具有足够光滑的表面，使得身体的强度由材料的整体性质而不是表面缺陷确定。

公开(公告)号：US06746553B2

公开(公告)日：2004-06-08

申请号：US10165569

申请日：2002-06-07

申请人： Lijun Yao ,  Tadao Ueda

发明人： Lijun Yao ,  Tadao Ueda

IPC分类号： C22F100

CPC分类号： C22F1/183 ,  C22F1/04 ,  C22F1/08 ,  C23C14/3414

摘要： The invention includes methods of reducing grain sizes of materials, and methods of forming sputtering targets. The invention includes a method for producing a sputtering target material in which a metallic material is subjected to plastic working at a processing percentage of at least 5% and a processing rate of at least 100%/second. In particular applications the metallic material comprises one or more of aluminum, copper and titanium.

摘要翻译： 本发明包括减少材料的晶粒尺寸的方法和形成溅射靶的方法。 本发明包括一种制造溅射靶材料的方法，其中金属材料以至少5％的加工百分比和至少100％/秒的加工率进行塑性加工。 在具体应用中，金属材料包括铝，铜和钛中的一种或多种。

公开(公告)号：US06350328B1

公开(公告)日：2002-02-26

申请号：US09605169

申请日：2000-06-27

申请人： David W. Hostetler

发明人： David W. Hostetler

IPC分类号： C22F100

CPC分类号： C22C1/005 ,  B21C23/08 ,  B21C35/02 ,  B21C37/045 ,  B21F11/00 ,  B21J5/004 ,  B23D25/14 ,  C22B26/22 ,  Y10S164/90

摘要： Feed material for use in producing a thixotropic alloy comprising pellets in the form of a solid cylinder having a length to diameter ratio in the range of from 1:1 to 2:1 and a maximum length of 0.250 inch.

摘要翻译： 用于制造触变合金的原料，其包括长度与直径比在1:1至2:1范围内且最大长度为0.250英寸的实心圆筒形式的颗粒。

公开(公告)号：US06228186B1

公开(公告)日：2001-05-08

申请号：US09418672

申请日：1999-10-14

申请人： Vikram Pavate ,  Keith J. Hansen ,  Glen Mori ,  Murali Narasimhan ,  Seshadri Ramaswami ,  Jaim Nulman

发明人： Vikram Pavate ,  Keith J. Hansen ,  Glen Mori ,  Murali Narasimhan ,  Seshadri Ramaswami ,  Jaim Nulman

IPC分类号： C22F100

CPC分类号： C23C14/3414 ,  Y10S29/002 ,  Y10S29/005 ,  Y10T29/49988

摘要： Improved targets for use in DC_magnetron sputtering of aluminum or like metals are disclosed for forming metallization films having low defect densities. Methods for manufacturing and using such targets are also disclosed. Conductivity anomalies such as those composed of metal oxide inclusions can induce arcing between the target surface and the plasma. The arcing can lead to production of excessive deposition material in the form of splats or blobs. Reducing the content of conductivity anomalies and strengthening the to-be-deposited material is seen to reduce production of such splats or blobs. Other splat limiting steps include smooth finishing of the target surface and low-stress ramp up of the plasma.

摘要翻译： 公开了用于形成具有低缺陷密度的金属化膜的改进的用于铝或类似金属的DC_磁控溅射的靶。 还公开了制造和使用这些靶的方法。 诸如由金属氧化物夹杂物组成的电导率异常可以引起目标表面和等离子体之间的电弧。 电弧会导致过剩的沉积材料以斑块或斑点的形式产生。 减少电导率异常的含量和加强待沉积材料可以减少这种斑块或斑点的产生。 其它限制步骤包括平滑地对目标表面进行精加工和等离子体的低应力升高。

公开(公告)号：US06190471B1

公开(公告)日：2001-02-20

申请号：US09318635

申请日：1999-05-26

申请人： Ramgopal Darolia ,  William S. Walston

发明人： Ramgopal Darolia ,  William S. Walston

IPC分类号： C22F100

CPC分类号： C23C28/3215 ,  C22C19/057 ,  C23C26/00 ,  C23C28/321 ,  C23C28/325 ,  C23C28/345 ,  C23C28/3455 ,  Y02T50/67 ,  Y10T428/12944

摘要： A superalloy article has a protective layer thereon, either in the form of an environmental coating or a the bond coat for a thermal barrier coating system. The protective layer has a high content of hafnium and/or zirconium to improve the adherence and properties of the protective layer. To introduce the hafnium and/or zirconium into the protective layer, the nickel-base alloy substrate, to which the protective layer is applied, is prepared with an initially elevated content of the hafnium and/or zirconium. A conventional bond coat is applied to the substrate. In an interdiffusion treatment performed during coating and/or subsequently, hafnium and/or zirconium diffuses from the substrate into the bond coat.

摘要翻译： 超级合金制品在其上具有保护层，其形式为环境涂层或用于热障涂层系统的粘合涂层。 保护层具有高含量的铪和/或锆，以改善保护层的粘附性和性能。 为了将铪和/或锆引入保护层中，以最初升高的铪和/或锆含量制备了施加有保护层的镍基合金基底。 将常规的粘合涂层施加到基底上。 在涂覆期间和/或随后的相互扩散处理中，铪和/或锆从基底扩散到粘结层中。

公开(公告)号：US06783627B1

公开(公告)日：2004-08-31

申请号：US09488309

申请日：2000-01-20

申请人： Imad Mahawili

发明人： Imad Mahawili

IPC分类号： C22F100

CPC分类号： C23C16/45576 ,  C23C8/36 ,  C23C16/4405 ,  C23C16/452 ,  C23C16/45578

摘要： A reactor for processing a semiconductor substrate includes a reactor housing which defines a processing chamber, and at least one gas injecting assembly. The processing chamber is adapted to support a semiconductor substrate therein. The gas injection assembly injects at least one gas into the processing chamber and onto the substrate and is adapted to ionize the gas injection into the processing chamber to increase the reactivity of the gas with the substrate to thereby enhance the processing of the semiconductor substrate. In preferred form, the gas is ionized into a gas plasma. For example, the gas injection assembly may include a gas plasma generator which ionizes the gas with an electromagnetic field. Preferably, the gas plasma generator ionizes the gas exteriorly of the processing chamber to isolate the substrate from the plasma generator. The gas injection assembly further includes one or more injection tubes, preferably quartz tubes, with each tube including a plurality of orifices through which the ionized gas is delivered into the processing chamber.

摘要翻译： 用于处理半导体衬底的反应器包括限定处理室的反应器壳体和至少一个气体注入组件。 处理室适于在其中支撑半导体衬底。 气体注入组件将至少一种气体注入到处理室中和衬底上，并且适于使注入到处理室的气体电离，以增加气体与衬底的反应性，从而增强半导体衬底的处理。 在优选形式中，气体被电离成气体等离子体。 例如，气体注入组件可以包括气体等离子体发生器，其利用电磁场对气体进行电离。 优选地，气体等离子体发生器将处理室外部的气体离子化，以将衬底与等离子体发生器隔离。 气体注入组件还包括一个或多个注射管，优选石英管，每个管包括多个孔，电离气体通过该孔排放到处理室中。