发明授权
- 专利标题： Nonvolatile semiconductor memory device and method for manufacturing the same
- 专利标题（中）： 非易失性半导体存储器件及其制造方法
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申请号： US10145122申请日： 2002-05-15
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公开(公告)号： US06747311B2公开(公告)日： 2004-06-08
- 发明人: Akira Goda , Riichiro Shirota , Kazuhiro Shimizu , Hiroaki Hazama , Hirohisa Iizuka , Seiichi Aritome , Wakako Moriyama
- 申请人： Akira Goda , Riichiro Shirota , Kazuhiro Shimizu , Hiroaki Hazama , Hirohisa Iizuka , Seiichi Aritome , Wakako Moriyama
- 优先权： JP11-118115 19990426
- 主分类号： H01L29788
- IPC分类号： H01L29788
摘要：
A nonvolatile semiconductor memory device includes memory cell transistors, peripheral transistors, first post-oxidation films provided on the gate electrode of all of the memory cell transistors, second post-oxidation films provided on the gate electrode of all of the peripheral transistors, first insulating films provided on the first post-oxidation films and covering a side surface of the gate electrode of all of the memory cell transistors and second insulating films provided on the second post-oxidation films and covering a side surface of the gate electrode of all of the peripheral transistors. The first and second insulating films are harder for an oxidizing agent to pass therethrough than a silicon oxide film, and the first and second insulating films are oxidized.