发明授权
- 专利标题: Ultra high-speed DDP-SRAM cache
- 专利标题(中): 超高速DDP-SRAM缓存
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申请号: US09827073申请日: 2001-04-05
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公开(公告)号: US06751151B2公开(公告)日: 2004-06-15
- 发明人: Louis L. Hsu , Toshiaki K. Kirihata , Li-Kong Wang , Robert C. Wong
- 申请人: Louis L. Hsu , Toshiaki K. Kirihata , Li-Kong Wang , Robert C. Wong
- 主分类号: G11C800
- IPC分类号: G11C800
摘要:
An ultra high-speed DDP-SRAM (Dual Dual-Port Static Random Access Memory) cache having a cache speed in approximately the GHz range. This is accomplished by (1) a specially designed dual-port SRAM whose size is slightly larger than that of a conventional single port SRAM, and (2) the use of a dual dual-port SRAM architecture which doubles its speed by interleaved read and write operations. A first embodiment provides a 6-T (transistor) all nMOS dual-port SRAM cell. A second embodiment provides a dual port 7T-SRAM cell which has only one port for write, and both ports for read.
公开/授权文献
- US20020174298A1 Ultra High-speed DDP-SRAM cache 公开/授权日:2002-11-21
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