发明授权
- 专利标题： Laser processing method
- 专利标题（中）： 激光加工方法
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申请号： US10288365申请日： 2002-11-06
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公开(公告)号： US06753213B2公开(公告)日： 2004-06-22
- 发明人: Satoshi Teramoto , Hisashi Ohtani , Akiharu Miyanaga , Toshiji Hamatani , Shunpei Yamazaki
- 申请人： Satoshi Teramoto , Hisashi Ohtani , Akiharu Miyanaga , Toshiji Hamatani , Shunpei Yamazaki
- 优先权： JP6-198042 19940728; JP6-198043 19940728; JP6-256148 19940926
- 主分类号： H01L2100
- IPC分类号： H01L2100
摘要：
A laser processing apparatus provides a heating chamber, a chamber for laser light irradiation and a robot arm, wherein a temperature of a substrate on which a silicon film to be irradiated with laser light is formed is heated to 450 to 750° C. in the heating chamber followed by irradiating the silicon film with laser light so that a silicon film having a single crystal or a silicon film that can be regarded as the single crystal can be obtained.
公开/授权文献
- US20030059991A1 Laser processing method 公开/授权日：2003-03-27
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