发明授权
- 专利标题： Cross point memory array using multiple thin films
- 专利标题（中）： 使用多个薄膜的交叉点存储阵列
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申请号： US10330512申请日： 2002-12-26
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公开(公告)号： US06753561B1公开(公告)日： 2004-06-22
- 发明人: Darrell Rinerson , Steven W. Longcor , Edmond R. Ward , Steve Kuo-Ren Hsia , Wayne Kinney , Christophe J. Chevallier
- 申请人： Darrell Rinerson , Steven W. Longcor , Edmond R. Ward , Steve Kuo-Ren Hsia , Wayne Kinney , Christophe J. Chevallier
- 主分类号： H01L31062
- IPC分类号： H01L31062
摘要：
Cross point memory array using multiple thin films. The invention is a cross point memory array that uses conductive array lines and multiple thin films as a memory plug. The thin films of the memory plug include a memory element and a non-ohmic device. The memory element switches between resistive states upon application of voltage pulses and the non-ohmic device imparts a relatively high resistance to the memory plug upon application of low magnitude voltages.
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