发明授权
- 专利标题： Method for constructing a magneto-resistive element
- 专利标题（中）： 用于构造磁阻元件的方法
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申请号： US10414325申请日： 2003-04-15
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公开(公告)号： US06756239B1公开(公告)日： 2004-06-29
- 发明人: Janice H. Nickel , Thomas Anthony , Manish Sharma , Manoj Bhattacharyya
- 申请人： Janice H. Nickel , Thomas Anthony , Manish Sharma , Manoj Bhattacharyya
- 主分类号： H01L2100
- IPC分类号： H01L2100
摘要：
A magneto-resistive element is constructed. A ferromagnetic sense layer is deposited on a surface. The ferromagnetic sense layer is patterned. An etch is performed in preparation for depositing a dielectric layer. The dielectric layer is deposited over the sense layer. A ferromagnetic pinned layer is deposited over the dielectric layer.
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