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公开(公告)号：US06756239B1
公开(公告)日：2004-06-29
申请号：US10414325
申请日：2003-04-15
IPC分类号： H01L2100
CPC分类号： H01L43/12
摘要： A magneto-resistive element is constructed. A ferromagnetic sense layer is deposited on a surface. The ferromagnetic sense layer is patterned. An etch is performed in preparation for depositing a dielectric layer. The dielectric layer is deposited over the sense layer. A ferromagnetic pinned layer is deposited over the dielectric layer.
摘要翻译： 构造了一个磁阻元件。 铁磁感应层沉积在表面上。 铁磁感应层被图案化。 进行蚀刻以准备沉积介电层。 介电层沉积在感应层上。 在电介质层上沉积铁磁钉扎层。
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公开(公告)号：US06862212B2
公开(公告)日：2005-03-01
申请号：US10697172
申请日：2003-10-30
IPC分类号： G11C11/14 , G11C11/15 , G11C11/16 , G11C11/56 , H01F10/30 , H01L21/8246 , H01L27/105 , H01L43/00 , H01L43/08 , G11C11/00
CPC分类号： H01L43/08 , G11C11/15 , G11C11/16 , G11C11/5607 , G11C2211/5615 , G11C2211/5616 , H01F10/3254 , H01F41/307 , H01L27/222
摘要： A magnetic memory cell includes first and second magneto-resistive devices connected in series. The first and second magneto-resistive devices have sense layers with different coercivities. Magnetic Random Access Memory (MRAM) devices may include arrays of these memory cells.
摘要翻译： 磁存储单元包括串联连接的第一和第二磁阻元件。 第一和第二磁阻装置具有不同矫顽力的感应层。 磁性随机存取存储器（MRAM）设备可以包括这些存储器单元的阵列。
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公开(公告)号：US06930369B2
公开(公告)日：2005-08-16
申请号：US10713510
申请日：2003-11-14
IPC分类号： H01L27/105 , G11C11/14 , G11C11/16 , H01L21/8229 , H01L21/8246 , H01L27/22 , H01L29/76 , H01L29/82 , H01L43/00 , H01L43/08
CPC分类号： H01L27/222 , G11C11/16 , G11C11/1675 , H01L43/08
摘要： A thin film device and a method of providing thermal assistance therein is disclosed. Accordingly, a heater material is utilized to thermally assist in the operation of the thin film device. By utilizing a heater material to thermally assist in the operation of the thin film device, a substantial improvement in the accuracy and performance of the thin film device is achieved. A first aspect of the present invention is a thin film device. The thin film device includes at least one patterned thin film layer, a heater material coupled to the at least one patterned thin film layer for providing thermal assistance to the at least one of the patterned thin film layers and a conductor coupled to the heater material for supplying energy to the heater material.
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公开(公告)号：US06911710B2
公开(公告)日：2005-06-28
申请号：US09925755
申请日：2001-08-09
IPC分类号： G11C11/14 , G11C11/15 , G11C11/16 , G11C11/56 , H01F10/30 , H01L21/8246 , H01L27/105 , H01L43/00 , H01L43/08 , H01L29/82
CPC分类号： H01L43/08 , G11C11/15 , G11C11/16 , G11C11/5607 , G11C2211/5615 , G11C2211/5616 , H01F10/3254 , H01F41/307 , H01L27/222
摘要： A magnetic memory cell includes first and second magneto-resistive devices connected in series. The first and second magneto-resistive devices have sense layers with different coercivities. Magnetic Random Access Memory (MRAM) devices may include arrays of these memory cells.
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5.发明授权公开(公告)号：US06905888B2
公开(公告)日：2005-06-14
申请号：US10676414
申请日：2003-09-30
IPC分类号： G11C11/15 , G11C11/16 , H01L21/8246 , H01L27/105 , H01L43/08 , H01L21/00
摘要： A ferromagnetic data layer of a magnetic memory element is formed with a controlled nucleation site. In some embodiments, the nucleation site may be a divot in the data layer or a protrusion from the data layer. A Magnetic Random Access Memory (“MRAM”) device may include an array of magnetic memory elements having data layers with controlled nucleation sites.
摘要翻译： 磁记忆元件的铁磁数据层形成有受控的成核位点。 在一些实施方案中，成核位点可以是数据层中的裂缝或来自数据层的突起。 磁性随机存取存储器（“MRAM”）器件可以包括具有受控成核位点的数据层的磁存储元件阵列。
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6.发明授权公开(公告)号：US06803616B2
公开(公告)日：2004-10-12
申请号：US10173195
申请日：2002-06-17
IPC分类号： H01L2976
摘要： A ferromagnetic data layer of a magnetic memory element is formed with a controlled nucleation site. The controlled nucleation sites improve the switching distribution of the magnetic memory elements, which increases reliability of writing to the magnetic memory elements. A Magnetic Random Access Memory (MRAM) device may include an array of such magnetic memory elements.
摘要翻译： 磁记忆元件的铁磁数据层形成有受控的成核位点。 受控的成核位点改善了磁存储元件的开关分布，这增加了写入磁存储元件的可靠性。 磁性随机存取存储器（MRAM）装置可以包括这种磁存储元件的阵列。
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7.发明授权Magnetoresistive device including pinned structure with a layer that provides texture for pinning 有权磁阻器件包括具有提供钉扎纹理的层的钉扎结构公开(公告)号：US06989975B2
公开(公告)日：2006-01-24
申请号：US10463993
申请日：2003-06-18
申请人： Janice H. Nickel , Manish Sharma
发明人： Janice H. Nickel , Manish Sharma
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/012 , G11B5/3903 , G11B5/3909 , G11B2005/3996 , G11C11/15 , H01F10/3254 , H01F10/3268 , H01F10/3295 , H01L43/08
摘要： A magnetoresistive device includes a free ferromagnetic layer; a pinned structure; and a spacer layer between the free layer and the pinned structure. The pinned structure may include first, second and third ferromagnetic layers that are ferromagnetically coupled. The first and third layers are separated by the second layer. The second layer has a lower magnetic moment than the first and third layers. In the alternative, the pinned structure may include a single layer of Co50Fe50.
摘要翻译： 磁阻器件包括自由铁磁层; 固定结构 以及在自由层和钉扎结构之间的间隔层。 钉扎结构可以包括铁磁耦合的第一，第二和第三铁磁层。 第一和第三层由第二层隔开。 第二层具有比第一层和第三层更低的磁矩。 在替代方案中，钉扎结构可以包括单层Co 50 N 50 O 50。
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公开(公告)号：US07054119B2
公开(公告)日：2006-05-30
申请号：US10463930
申请日：2003-06-18
申请人： Manish Sharma , Janice H. Nickel
发明人： Manish Sharma , Janice H. Nickel
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G11B5/3903 , G11B5/3909 , G11B2005/3996 , G11C11/15 , H01F10/3254 , H01F10/3263 , H01F10/3272 , H01F41/303 , H01L43/08 , Y10T29/49034
摘要： A coupled ferromagnetic structure includes a first ferromagnetic layer, a spacer layer on a first surface of the first ferromagnetic layer, and a second ferromagnetic layer on the spacer layer. Interlayer exchange coupling occurs between the first and second ferromagnetic layers. The coupling may be ferromagnetic or antiferromagnetic. Morphology of the first surface is modified to tailor the interlayer exchange coupling. The structure may form a part of a magnetoresistive device such as a magnetic tunnel junction.
摘要翻译： 耦合的铁磁结构包括第一铁磁层，第一铁磁层的第一表面上的间隔层和间隔层上的第二铁磁层。 层间交换耦合发生在第一和第二铁磁层之间。 耦合可以是铁磁性或反铁磁性的。 第一表面的形态被修改以定制层间交换耦合。 该结构可以形成诸如磁性隧道结的磁阻器件的一部分。
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公开(公告)号：US07151652B2
公开(公告)日：2006-12-19
申请号：US10464161
申请日：2003-06-18
申请人： Janice H. Nickel , Manish Sharma
发明人： Janice H. Nickel , Manish Sharma
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3909 , G11B5/3932 , G11C11/16
摘要： A top-pinned magnetoresistive device includes a free ferromagnetic layer; a spacer layer on the free layer; and a pinned ferromagnetic layer on the spacer layer. At least one interface property at an upper surface of the pinned layer is adjusted during fabrication of the magnetoresistive device.
摘要翻译： 顶置磁阻器件包括自由铁磁层; 自由层上的间隔层; 以及在间隔层上的钉扎铁磁层。 在制造磁阻器件期间调整在被钉扎层的上表面处的至少一个界面特性。
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公开(公告)号：US07103718B2
公开(公告)日：2006-09-05
申请号：US10234424
申请日：2002-09-03
申请人： Janice H. Nickel , Manish Sharma
发明人： Janice H. Nickel , Manish Sharma
IPC分类号： G06F12/00
CPC分类号： G11C11/16 , G11C7/20 , G11C29/02 , G11C29/026 , G11C29/028 , G11C2029/0407 , G11C2029/5004
摘要： A non-volatile memory module for use in a computer system is disclosed. The non-volatile memory module is capable of storing information indefinitely and can be inserted and removed from the computer system during operation. The non-volatile memory can serve as the main memory within the computer system to hold the operating system and any other programs that are accessed by the computer system during operation.
摘要翻译： 公开了一种用于计算机系统的非易失性存储器模块。 非易失性存储器模块能够无限期地存储信息，并且可以在操作期间从计算机系统插入和移除。 非易失性存储器可以用作计算机系统内的主存储器，以在操作期间保持操作系统和计算机系统访问的任何其他程序。
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