A method of fabricating a non-volatile ferroelectric memory transistor includes forming a bottom electrode; depositing a ferroelectric layer over an active region beyond the margins of the bottom electrode; depositing a top electrode on the ferroelectric layer; and metallizing the structure to form a source electrode, a gate electrode and a drain electrode. A non-volatile ferroelectric memory transistor includes a bottom electrode formed above a gate region, wherein the bottom electrode has a predetermined area within a peripheral boundary; a ferroelectric layer extending over and beyond the bottom electrode peripheral boundary; and a top electrode formed on said ferroelectric layer.